IRHM57064 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM57064

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 125 nS

Cossⓘ - Capacitancia de salida: 2300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO254AA

 Búsqueda de reemplazo de IRHM57064 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRHM57064 datasheet

 ..1. Size:171K  international rectifier
 irhm57064.pdf pdf_icon

IRHM57064

PD-93792E RADIATION HARDENED IRHM57064 POWER MOSFET 60V, N-CHANNEL TECHNOLOGY THRU-HOLE (TO-254AA) 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012 35A* IRHM53064 300K Rads (Si) 0.012 35A* IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 1000K Rads (Si) 0.013 35A* TO-254AA International Rectifier s R5TM technology

 8.1. Size:111K  international rectifier
 irhm57260.pdf pdf_icon

IRHM57064

PD - 91862D RADIATION HARDENED IRHM57260 POWER MOSFET 200V, N-CHANNEL TECHNOLOGY 4 4 THRU-HOLE (TO-254AA) # c Product Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049 35A* IRHM53260 300K Rads (Si) 0.049 35A* IRHM54260 600K Rads (Si) 0.049 35A* IRHM58260 1000K Rads (Si) 0.050 35A* TO-254AA Features International Rectifier s R5TM

 8.2. Size:181K  international rectifier
 irhm57260se.pdf pdf_icon

IRHM57064

PD - 93880C RADIATION HARDENED IRHM57260SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049 35A* TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Single Event Effect (SEE) Hardened applications. T

 8.3. Size:166K  international rectifier
 irhm57264se.pdf pdf_icon

IRHM57064

PD-93798B RADIATION HARDENED IRHM57264SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066 35A* TO-254 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Low RDS(on) applications. These devices have been char

MOSTRAR MÁS

Otros transistores... IRHN7250SE, IRHN7450, IRHN7450SE, IRHN7C50SE, IRHN9130, IRHN9150, IRHN9230, IRHN9250, 4435, IRHM57160, IRHM57260, IRHM57260SE, IRHM57264SE, IRHM57Z60, IRHM7054, IRHM7064, IRHM7130