IRFP054N Todos los transistores

 

IRFP054N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP054N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 130(max) nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO247AC
     - Selección de transistores por parámetros

 

IRFP054N Datasheet (PDF)

 ..1. Size:109K  international rectifier
 irfp054n.pdf pdf_icon

IRFP054N

PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben

 ..2. Size:1494K  international rectifier
 irfp054npbf.pdf pdf_icon

IRFP054N

PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 ..3. Size:241K  inchange semiconductor
 irfp054n.pdf pdf_icon

IRFP054N

isc N-Channel MOSFET Transistor IRFP054NIIRFP054NFEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

 7.1. Size:216K  international rectifier
 irfp054v.pdf pdf_icon

IRFP054N

PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

MOSTRAR MÁS

Otros transistores... IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , MMD60R360PRH , IRFP064 , IRFP064N , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A .

History: IRF521

 

 
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