Справочник MOSFET. IRFP054N

 

IRFP054N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IRFP054N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 81 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 880 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO247AC
     - подбор MOSFET транзистора по параметрам

 

IRFP054N Datasheet (PDF)

 ..1. Size:109K  international rectifier
irfp054n.pdfpdf_icon

IRFP054N

PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben

 ..2. Size:1494K  international rectifier
irfp054npbf.pdfpdf_icon

IRFP054N

PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 ..3. Size:241K  inchange semiconductor
irfp054n.pdfpdf_icon

IRFP054N

isc N-Channel MOSFET Transistor IRFP054NIIRFP054NFEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

 7.1. Size:216K  international rectifier
irfp054v.pdfpdf_icon

IRFP054N

PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

Другие MOSFET... IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , MMD60R360PRH , IRFP064 , IRFP064N , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A .

History: STF2HNK60Z | TSF20N65MR | IRFSZ24 | MTP2071M3 | NCE3008Y | ZXMN10A25K | NCE70N380F

 

 
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