IRFP054N. Аналоги и основные параметры
Наименование производителя: IRFP054N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 81 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 66 ns
Cossⓘ - Выходная емкость: 880 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP054N
- подборⓘ MOSFET транзистора по параметрам
IRFP054N даташит
irfp054n.pdf
PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben
irfp054npbf.pdf
PD- 95423 IRFP054NPbF Lead-Free www.irf.com 1 06/16/04 IRFP054NPbF 2 www.irf.com IRFP054NPbF www.irf.com 3 IRFP054NPbF 4 www.irf.com IRFP054NPbF www.irf.com 5 IRFP054NPbF 6 www.irf.com IRFP054NPbF www.irf.com 7 IRFP054NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH AS
irfp054n.pdf
isc N-Channel MOSFET Transistor IRFP054N IIRFP054N FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc
irfp054v.pdf
PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to
Другие IGBT... IRFN9140, IRFN9140SMD, IRFN9240, IRFP044, IRFP044N, IRFP048, IRFP048N, IRFP054, 2N60, IRFP064, IRFP064N, IRFP130, IRFP131, IRFP132, IRFP133, IRFP140, IRFP140A
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