IRFP054N. Аналоги и основные параметры

Наименование производителя: IRFP054N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 170 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 81 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 66 ns

Cossⓘ - Выходная емкость: 880 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm

Тип корпуса: TO247AC

Аналог (замена) для IRFP054N

- подборⓘ MOSFET транзистора по параметрам

 

IRFP054N даташит

 ..1. Size:109K  international rectifier
irfp054n.pdfpdf_icon

IRFP054N

PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben

 ..2. Size:1494K  international rectifier
irfp054npbf.pdfpdf_icon

IRFP054N

PD- 95423 IRFP054NPbF Lead-Free www.irf.com 1 06/16/04 IRFP054NPbF 2 www.irf.com IRFP054NPbF www.irf.com 3 IRFP054NPbF 4 www.irf.com IRFP054NPbF www.irf.com 5 IRFP054NPbF 6 www.irf.com IRFP054NPbF www.irf.com 7 IRFP054NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH AS

 ..3. Size:241K  inchange semiconductor
irfp054n.pdfpdf_icon

IRFP054N

isc N-Channel MOSFET Transistor IRFP054N IIRFP054N FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

 7.1. Size:216K  international rectifier
irfp054v.pdfpdf_icon

IRFP054N

PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

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