IRHM57Z60 Todos los transistores

 

IRHM57Z60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM57Z60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 125 nS

Conductancia de drenaje-sustrato (Cd): 4230 pF

Resistencia drenaje-fuente RDS(on): 0.0095 Ohm

Empaquetado / Estuche: TO254AA

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IRHM57Z60 Datasheet (PDF)

1.1. irhm57z60.pdf Size:119K _international_rectifier

IRHM57Z60
IRHM57Z60

PD - 93786B RADIATION HARDENED IRHM57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHM57Z60 100K Rads (Si) 0.0095Ω 35A* IRHM53Z60 300K Rads (Si) 0.0095Ω 35A* IRHM54Z60 600K Rads (Si) 0.0095Ω 35A* IRHM58Z60 1000K Rads (Si) 0.010Ω 35A* TO-254AA Features: International Rectifier’s R

4.1. irhm57260se.pdf Size:181K _international_rectifier

IRHM57Z60
IRHM57Z60

PD - 93880C RADIATION HARDENED IRHM57260SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 ™ Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049Ω 35A* TO-254AA International Rectifier’s R5TM technology provides Features: high performance power MOSFETs for space n Single Event Effect (SEE) Hardened applications. T

4.2. irhm57160.pdf Size:158K _international_rectifier

IRHM57Z60
IRHM57Z60

PD-93784G RADIATION HARDENED IRHM57160 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 ™ Product Summary Part Number Radiation Level RDS(on) ID IRHM57160 100K Rads (Si) 0.018Ω 35A* IRHM53160 300K Rads (Si) 0.018Ω 35A* IRHM54160 600K Rads (Si) 0.018Ω 35A* IRHM58160 1000K Rads (Si) 0.019Ω 35A* TO-254AA Features: International Rectifier’s R5T

 4.3. irhm57260.pdf Size:111K _international_rectifier

IRHM57Z60
IRHM57Z60

PD - 91862D RADIATION HARDENED IRHM57260 POWER MOSFET 200V, N-CHANNEL TECHNOLOGY 4 4 THRU-HOLE (TO-254AA) # c Product Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049Ω 35A* IRHM53260 300K Rads (Si) 0.049Ω 35A* IRHM54260 600K Rads (Si) 0.049Ω 35A* IRHM58260 1000K Rads (Si) 0.050Ω 35A* TO-254AA Features: International Rectifier’s R5TM

4.4. irhm57264se.pdf Size:166K _international_rectifier

IRHM57Z60
IRHM57Z60

PD-93798B RADIATION HARDENED IRHM57264SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 ™ Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066Ω 35A* TO-254 International Rectifier’s R5TM technology provides Features: high performance power MOSFETs for space n Low RDS(on) applications. These devices have been char

 4.5. irhm57064.pdf Size:171K _international_rectifier

IRHM57Z60
IRHM57Z60

PD-93792E RADIATION HARDENED IRHM57064 POWER MOSFET 60V, N-CHANNEL TECHNOLOGY THRU-HOLE (TO-254AA) 5 5 ™ Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012Ω 35A* IRHM53064 300K Rads (Si) 0.012Ω 35A* IRHM54064 600K Rads (Si) 0.012Ω 35A* IRHM58064 1000K Rads (Si) 0.013Ω 35A* TO-254AA International Rectifier’s R5TM technology

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