IRHM57Z60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHM57Z60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 4230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: TO254AA
Búsqueda de reemplazo de MOSFET IRHM57Z60
IRHM57Z60 Datasheet (PDF)
irhm57z60.pdf
PD - 93786BRADIATION HARDENED IRHM57Z60POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHM57Z60 100K Rads (Si) 0.0095 35A* IRHM53Z60 300K Rads (Si) 0.0095 35A* IRHM54Z60 600K Rads (Si) 0.0095 35A* IRHM58Z60 1000K Rads (Si) 0.010 35A* TO-254AAFeatures:International Rectifiers R
irhm57064.pdf
PD-93792ERADIATION HARDENED IRHM57064POWER MOSFET60V, N-CHANNELTECHNOLOGYTHRU-HOLE (TO-254AA)55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012 35A* IRHM53064 300K Rads (Si) 0.012 35A* IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 1000K Rads (Si) 0.013 35A*TO-254AAInternational Rectifiers R5TM technology
irhm57260.pdf
PD - 91862DRADIATION HARDENED IRHM57260POWER MOSFET 200V, N-CHANNELTECHNOLOGY44THRU-HOLE (TO-254AA) #cProduct Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049 35A* IRHM53260 300K Rads (Si) 0.049 35A* IRHM54260 600K Rads (Si) 0.049 35A* IRHM58260 1000K Rads (Si) 0.050 35A*TO-254AAFeatures:International Rectifiers R5TM
irhm57260se.pdf
PD - 93880CRADIATION HARDENED IRHM57260SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049 35A* TO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Single Event Effect (SEE) Hardenedapplications. T
irhm57264se.pdf
PD-93798BRADIATION HARDENED IRHM57264SEPOWER MOSFET250V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066 35A* TO-254International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Low RDS(on)applications. These devices have been char
irhm57160.pdf
PD-93784GRADIATION HARDENED IRHM57160POWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-254AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57160 100K Rads (Si) 0.018 35A* IRHM53160 300K Rads (Si) 0.018 35A* IRHM54160 600K Rads (Si) 0.018 35A* IRHM58160 1000K Rads (Si) 0.019 35A*TO-254AAFeatures:International Rectifiers R5T
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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