IRHM7130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHM7130
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHM7130

IRHM7130 Datasheet (PDF)

..1. Size:485K international rectifier
irhm7130.pdf

PD - 90707DIRHM7130IRHM7130IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

8.1. Size:1035K international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

8.2. Size:444K international rectifier
irhm7150.pdf

PD - 90675CIRHM7150IRHM7150IRHM7150IRHM7150IRHM7150 JANSR2N7268JANSR2N7268 JANSR2N7268 JANSR2N7268JANSR2N7268RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

8.3. Size:266K international rectifier
irhm7160.pdf

PD - 91331CIRHM7160IRHM7160IRHM7160IRHM7160IRHM7160 JANSR2N7432JANSR2N7432 JANSR2N7432 JANSR2N7432JANSR2N7432RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

8.4. Size:255K international rectifier
irhm7064 irhm7160 irhm7260.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: