Справочник MOSFET. IRHM7130

 

IRHM7130 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRHM7130
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO254AA

 Аналог (замена) для IRHM7130

 

 

IRHM7130 Datasheet (PDF)

 ..1. Size:485K  international rectifier
 irhm7130.pdf

IRHM7130 IRHM7130

PD - 90707DIRHM7130IRHM7130IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

 8.1. Size:1035K  international rectifier
 irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

IRHM7130 IRHM7130

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 8.2. Size:444K  international rectifier
 irhm7150.pdf

IRHM7130 IRHM7130

PD - 90675CIRHM7150IRHM7150IRHM7150IRHM7150IRHM7150 JANSR2N7268JANSR2N7268 JANSR2N7268 JANSR2N7268JANSR2N7268RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

 8.3. Size:266K  international rectifier
 irhm7160.pdf

IRHM7130 IRHM7130

PD - 91331CIRHM7160IRHM7160IRHM7160IRHM7160IRHM7160 JANSR2N7432JANSR2N7432 JANSR2N7432 JANSR2N7432JANSR2N7432RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

 8.4. Size:255K  international rectifier
 irhm7064 irhm7160 irhm7260.pdf

IRHM7130 IRHM7130

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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