IRHM7230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHM7230
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO254AA
Búsqueda de reemplazo de IRHM7230 MOSFET
IRHM7230 Datasheet (PDF)
irhm7230.pdf

PD - 90713EIRHM7230IRHM7230IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE
irhm7260.pdf

PD - 91332DIRHM7260IRHM7260IRHM7260IRHM7260IRHM7260 JANSR2N7433JANSR2N7433 JANSR2N7433 JANSR2N7433JANSR2N7433RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR
irhm7264se.pdf

PD - 91393EIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEJANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:
irhm7264se irhm7360se irhm7460se.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND
Otros transistores... IRHM57260SE , IRHM57264SE , IRHM57Z60 , IRHM7054 , IRHM7064 , IRHM7130 , IRHM7150 , IRHM7160 , AO4407 , IRHM7250 , IRHM7260 , IRHM7264SE , IRHM7360 , IRHM7360SE , IRHM7450 , IRHM7450SE , IRHM7460SE .
History: ME2606-G | SPE4N65G



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor | bu2508df | 2n2222a transistor equivalent | 2sc2509 | 2n1815