IRHM7360 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHM7360
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V
Qgⓘ - Carga de la puerta: 45 nC
trⓘ - Tiempo
de subida: 59 nS
Cossⓘ - Capacitancia de salida: 990 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Encapsulados: TO254AA
Búsqueda de reemplazo de IRHM7360 MOSFET
- Selecciónⓘ de transistores por parámetros
IRHM7360 datasheet
..1. Size:295K international rectifier
irhm7360.pdf 
PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED IRHM7360 HEXFET TRANSISTOR IRHM8360 N CHANNEL MEGA RAD HARD Product Summary 400Volt, 0.22 , MEGA RAD HARD HEXFET Part Number BVDSS RDS(on) ID International Rectifier s RAD HARD technology HEXFETs demonstrate excellent threshold voltage IRHM7360 400V 0.22 22A stability and breakdown voltage stability at tota
0.1. Size:384K international rectifier
irhm7264se irhm7360se irhm7460se.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND
0.2. Size:270K international rectifier
irhm7360se.pdf
PD - 91224D IRHM7360SE IRHM7360SE IRHM7360SE IRHM7360SE IRHM7360SE JANSR2N7391 JANSR2N7391 JANSR2N7391 JANSR2N7391 JANSR2N7391 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 400V, N-CHANNEL 400V, N-CHANNEL 400V, N-CHANNEL 400V, N-CHANNEL 400V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF
9.1. Size:138K international rectifier
irhm7450se.pdf
PD - 91223D RADIATION HARDENED IRHM7450SE POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12A TO-254AA International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology
9.2. Size:265K international rectifier
irhm7260.pdf
PD - 91332D IRHM7260 IRHM7260 IRHM7260 IRHM7260 IRHM7260 JANSR2N7433 JANSR2N7433 JANSR2N7433 JANSR2N7433 JANSR2N7433 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PR
9.3. Size:269K international rectifier
irhm7264se.pdf
PD - 91393E IRHM7264SE IRHM7264SE IRHM7264SE IRHM7264SE IRHM7264SE JANSR2N7434 JANSR2N7434 JANSR2N7434 JANSR2N7434 JANSR2N7434 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 250V, N-CHANNEL 250V, N-CHANNEL 250V, N-CHANNEL 250V, N-CHANNEL 250V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF
9.4. Size:119K international rectifier
irhm7z60.pdf
PD - 91701B RADIATION HARDENED IRHM7Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM7Z60 100K Rads (Si) 0.014 35*A IRHM3Z60 300K Rads (Si) 0.014 35*A IRHM4Z60 600K Rads (Si) 0.014 35*A IRHM8Z60 1000K Rads (Si) 0.014 35*A TO-254AA International Rectifier s RAD-Hard HEX
9.5. Size:268K international rectifier
irhm7064.pdf
PD - 91564D IRHM7064 IRHM7064 IRHM7064 IRHM7064 IRHM7064 JANSR2N7431 JANSR2N7431 JANSR2N7431 JANSR2N7431 JANSR2N7431 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PRF-19500/6
9.6. Size:458K international rectifier
irhm7230.pdf
PD - 90713E IRHM7230 IRHM7230 IRHM7230 RADIATION HARDENED IRHM7230 RADIATION HARDENED IRHM7230 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE
9.7. Size:1035K international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,
9.8. Size:267K international rectifier
irhm7054.pdf
PD - 90887D IRHM7054 IRHM7054 IRHM7054 IRHM7054 IRHM7054 JANSR2N7394 JANSR2N7394 JANSR2N7394 JANSR2N7394 JANSR2N7394 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PRF-19500/
9.9. Size:271K international rectifier
irhm7250.pdf
PD - 90674C IRHM7250 RADIATION HARDENED JANSR2N7269 POWER MOSFET 200V, N-CHANNEL REF MIL-PRF-19500/603 THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7250 100K Rads (Si) 0.10 26A JANSR2N7269 IRHM3250 300K Rads (Si) 0.10 26A JANSF2N7269 IRHM4250 600K Rads (Si) 0.10 26A JANSG2N7269 IRHM82
9.10. Size:269K international rectifier
irhm7460se.pdf
PD - 91394E IRHM7460SE IRHM7460SE IRHM7460SE IRHM7460SE IRHM7460SE JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL POWER MOSFET REF MIL-PRF-19500/661 POWER MOSFET REF MIL-PRF-19500/661 POWER MOSF
9.11. Size:485K international rectifier
irhm7130.pdf
PD - 90707D IRHM7130 IRHM7130 IRHM7130 RADIATION HARDENED IRHM7130 RADIATION HARDENED IRHM7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE
9.12. Size:140K international rectifier
irhm7250se.pdf
PD - 91779A RADIATION HARDENED IRHM7250SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7250SE 100K Rads (Si) 0.10 26A TO-254AA International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a
9.13. Size:444K international rectifier
irhm7150.pdf
PD - 90675C IRHM7150 IRHM7150 IRHM7150 IRHM7150 IRHM7150 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PR
9.14. Size:311K international rectifier
irhm7450.pdf
PD - 90673A IRHM7450 IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET TRANSISTOR JANSH2N7270 N CHANNEL MEGA RAD HARD 500Volt, 0.45 , MEGA RAD HARD HEXFET Product Summary International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHM7450 500V 0.45 11A stability and breakdown v
9.15. Size:266K international rectifier
irhm7160.pdf
PD - 91331C IRHM7160 IRHM7160 IRHM7160 IRHM7160 IRHM7160 JANSR2N7432 JANSR2N7432 JANSR2N7432 JANSR2N7432 JANSR2N7432 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF MIL-PR
9.16. Size:255K international rectifier
irhm7064 irhm7160 irhm7260.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433
Otros transistores... IRHM7064, IRHM7130, IRHM7150, IRHM7160, IRHM7230, IRHM7250, IRHM7260, IRHM7264SE, STP80NF70, IRHM7360SE, IRHM7450, IRHM7450SE, IRHM7460SE, IRHM7Z60, IRHM9064, IRHM9130, IRHM9150
