IRHM7460SE Todos los transistores

 

IRHM7460SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM7460SE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO254AA

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IRHM7460SE Datasheet (PDF)

1.1. irhm7264se irhm7360se irhm7460se.pdf Size:384K _international_rectifier

IRHM7460SE
IRHM7460SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

1.2. irhm7460se.pdf Size:269K _international_rectifier

IRHM7460SE
IRHM7460SE

PD - 91394E IRHM7460SE IRHM7460SE IRHM7460SE IRHM7460SE IRHM7460SE JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V JANSR2N7392 500V RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL RADIATION HARDENED N-CHANNEL POWER MOSFET REF: MIL-PRF-19500/661 POWER MOSFET REF: MIL-PRF-19500/661 POWER MOSFET

 4.1. irhm7450se.pdf Size:138K _international_rectifier

IRHM7460SE
IRHM7460SE

PD - 91223D RADIATION HARDENED IRHM7450SE POWER MOSFET 500V, N-CHANNEL ® THRU-HOLE (TO-254AA) RAD Hard™ HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51Ω 12A TO-254AA International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs Features: for space applications. This technology

4.2. irhm7054 irhm7150 irhm7250 irhm7450.pdf Size:1035K _international_rectifier

IRHM7460SE
IRHM7460SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 4.3. irhm7450.pdf Size:311K _international_rectifier

IRHM7460SE
IRHM7460SE

PD - 90673A IRHM7450 IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET TRANSISTOR JANSH2N7270 N CHANNEL MEGA RAD HARD ? 500Volt, 0.45? ?, MEGA RAD HARD HEXFET Product Summary ? ? International Rectifiers RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHM7450 500V 0.45? 11A stability and breakdown voltage stability a

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