INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

PD - 91394EIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELPOWER MOSFET REF: MIL-PRF-19500/661POWER MOSFET REF: MIL-PRF-19500/661POWER MOSF

PD - 91223DRADIATION HARDENED IRHM7450SEPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

PD - 90673AIRHM7450IRHM8450REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270HEXFET TRANSISTOR JANSH2N7270N CHANNELMEGA RAD HARD500Volt, 0.45, MEGA RAD HARD HEXFET Product SummaryInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRHM7450 500V 0.45 11Astability and breakdown v