IRHM9064 Todos los transistores

 

IRHM9064 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM9064

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.05 Ohm

Empaquetado / Estuche: TO254AA

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IRHM9064 Datasheet (PDF)

1.1. irhm9064.pdf Size:122K _international_rectifier

IRHM9064
IRHM9064

PD - 91438B IRHM9064 JANSR2N7424 RADIATION HARDENED 60V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9064 100K Rads (Si) 0.05? -35A* JANSR2N7424 IRHM93064 300K Rads (Si) 0.05? -35A* JANSF2N7424 International Rectifiers RAD-Hard HEXFETTM technol- TO-254AA

1.2. irhm9064 irhm9160 irhm9260.pdf Size:237K _international_rectifier

IRHM9064
IRHM9064

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

 5.1. irhm9150.pdf Size:144K _international_rectifier

IRHM9064
IRHM9064

PD - 90889C IRHM9150 JANSR2N7422 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/662 THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080? -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080? -22A JANSF2N7422 TO-254AA International Rectifiers RADHard HEXFETTM technol-

5.2. irhm9230.pdf Size:94K _international_rectifier

IRHM9064
IRHM9064

Provisional Data Sheet No. PD-9.1395 I T TI T T T I T Product Summary Ω -200 Volt, 0.8Ω RAD HARD HEXFET Ω, Ω Ω International Rectifier’s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHM9230 -200V 0.8Ω -6.5A high as 105 Rads (Si).

 5.3. irhm93160.pdf Size:127K _international_rectifier

IRHM9064
IRHM9064

Preliminary Data Sheet No. PD-9.1415B REPETITIVE AVALANCHE AND dv/dt RATED IRHM9160 HEXFET TRANSISTOR IRHM93160 P-CHANNEL RAD HARD ? -100 Volt, 0.073? Product Summary ?, RAD HARD HEXFET ? ? International Rectifiers P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability IRHM9160 -100V 0.073? -35*A and breakdown voltage st

5.4. irhm9130.pdf Size:128K _international_rectifier

IRHM9064
IRHM9064

PD - 90888C RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-254AA) RAD-Hard™ HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3Ω -11A IRHM93130 300K Rads (Si) 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technol- TO-254AA ogy provides high performance power MOSFETs for space applications.

 5.5. irhm9260.pdf Size:123K _international_rectifier

IRHM9064
IRHM9064

PD - 93858 IRHM9260 JANSR2N7426 200V, P-CHANNEL RADIATION HARDENED REF: MIL-PRF-19500/660 POWER MOSFET RAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9260 100K Rads (Si) 0.160? -27A JANSR2N7426 IRHM93260 300K Rads (Si) 0.160? -27A JANSF2N7426 TO-254AA International Rectifiers RAD-HardTM HEXFET

5.6. irhm9250.pdf Size:117K _international_rectifier

IRHM9064
IRHM9064

PD - 91299C IRHM9250 JANSR2N7423 RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/662 THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9250 100K Rads (Si) 0.315? -14A JANSR2N7423 IRHM93250 300K Rads (Si) 0.315? -14A JANSF2N7423 International Rectifiers RAD-Hard HEXFET technol- TO-254AA o

5.7. irhm9150 irhm9250.pdf Size:272K _international_rectifier

IRHM9064
IRHM9064

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

5.8. irhm9160.pdf Size:122K _international_rectifier

IRHM9064
IRHM9064

PD - 91415E IRHM9160 JANSR2N7425 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073? -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073? -35A* JANSF2N7425 International Rectifiers RAD-Hard HEXFETTM technol- TO-254A

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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