IRHM9064 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 91438BIRHM9064JANSR2N7424RADIATION HARDENED 60V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/660THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9064 100K Rads (Si) 0.05 -35A* JANSR2N7424 IRHM93064 300K Rads (Si) 0.05 -35A* JANSF2N7424International Rectifiers RAD-Hard HEXFETTM technol-

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

Provisional Data Sheet No. PD-9.1395I T TI T T T I T Product Summary-200 Volt, 0.8 RAD HARD HEXFET, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiation doses asIRHM9230 -200V 0.8 -6.5Ahigh as 105 Rads (Si).

Preliminary Data Sheet No. PD-9.1415BREPETITIVE AVALANCHE AND dv/dt RATED IRHM9160HEXFET TRANSISTOR IRHM93160P-CHANNEL RAD HARD-100 Volt, 0.073 Product Summary, RAD HARD HEXFETInternational Rectifiers P-Channel RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityIRHM9160 -100V 0.073 -35*Aand br

PD - 91415EIRHM9160JANSR2N7425RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/660THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425International Rectifiers RAD-Hard HEXFETTM techn

PD - 91299CIRHM9250JANSR2N7423RADIATION HARDENED200V, P-CHANNELPOWER MOSFETREF: MIL-PRF-19500/662THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423International Rectifiers RAD-Hard HEXFET technol-

PD - 90888CRADIATION HARDENED IRHM9130POWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol-TO-254AAogy provides high performance power MOSFETs forspace applications.

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

PD - 90889CIRHM9150JANSR2N7422RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/662THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080 -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080 -22A JANSF2N7422TO-254AAInternational Rectifiers RADHard HEXFETT

PD - 93858IRHM9260JANSR2N7426200V, P-CHANNEL RADIATION HARDENEDREF: MIL-PRF-19500/660 POWER MOSFET RAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-254AA)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9260 100K Rads (Si) 0.160 -27A JANSR2N7426 IRHM93260 300K Rads (Si) 0.160 -27A JANSF2N7426 TO-254AAInternational Rectifiers RAD-Hard