IRHM9064 Todos los transistores

PD - 91438B IRHM9064 JANSR2N7424 RADIATION HARDENED 60V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9064 100K Rads (Si) 0.05 -35A* JANSR2N7424 IRHM93064 300K Rads (Si) 0.05 -35A* JANSF2N7424 International Rectifier s RAD-Hard HEXFETTM technol-... See More ⇒

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426... See More ⇒

Provisional Data Sheet No. PD-9.1395 I T TI T T T I T Product Summary -200 Volt, 0.8 RAD HARD HEXFET , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHM9230 -200V 0.8 -6.5A high as 105 Rads (Si).... See More ⇒

Preliminary Data Sheet No. PD-9.1415B REPETITIVE AVALANCHE AND dv/dt RATED IRHM9160 HEXFET TRANSISTOR IRHM93160 P-CHANNEL RAD HARD -100 Volt, 0.073 Product Summary , RAD HARD HEXFET International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability IRHM9160 -100V 0.073 -35*A and br... See More ⇒

PD - 91415E IRHM9160 JANSR2N7425 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425 International Rectifier s RAD-Hard HEXFETTM techn... See More ⇒

PD - 91299C IRHM9250 JANSR2N7423 RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/662 THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423 IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423 International Rectifier s RAD-Hard HEXFET technol-... See More ⇒

PD - 90888C RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11A International Rectifier s RAD-Hard HEXFETTM technol- TO-254AA ogy provides high performance power MOSFETs for space applications.... See More ⇒

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U... See More ⇒

PD - 90889C IRHM9150 JANSR2N7422 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/662 THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080 -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080 -22A JANSF2N7422 TO-254AA International Rectifier s RADHard HEXFETT... See More ⇒

PD - 93858 IRHM9260 JANSR2N7426 200V, P-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/660 POWER MOSFET RAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9260 100K Rads (Si) 0.160 -27A JANSR2N7426 IRHM93260 300K Rads (Si) 0.160 -27A JANSF2N7426 TO-254AA International Rectifier s RAD-Hard... See More ⇒