IRHM9130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHM9130
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHM9130

IRHM9130 Datasheet (PDF)

..1. Size:128K international rectifier
irhm9130.pdf

PD - 90888CRADIATION HARDENED IRHM9130POWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol-TO-254AAogy provides high performance power MOSFETs forspace applications.

8.1. Size:237K international rectifier
irhm9064 irhm9160 irhm9260.pdf

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

8.2. Size:122K international rectifier
irhm9160.pdf

PD - 91415EIRHM9160JANSR2N7425RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/660THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425International Rectifiers RAD-Hard HEXFETTM techn

8.3. Size:272K international rectifier
irhm9150 irhm9250 irhn9150 irhn9250.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

8.4. Size:144K international rectifier
irhm9150.pdf

PD - 90889CIRHM9150JANSR2N7422RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/662THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080 -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080 -22A JANSF2N7422TO-254AAInternational Rectifiers RADHard HEXFETT

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: TSU5N65M

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