IRHM9130 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM9130

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO254AA

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IRHM9130 datasheet

 ..1. Size:128K  international rectifier
 irhm9130.pdf pdf_icon

IRHM9130

PD - 90888C RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11A International Rectifier s RAD-Hard HEXFETTM technol- TO-254AA ogy provides high performance power MOSFETs for space applications.

 8.1. Size:237K  international rectifier
 irhm9064 irhm9160 irhm9260.pdf pdf_icon

IRHM9130

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

 8.2. Size:122K  international rectifier
 irhm9160.pdf pdf_icon

IRHM9130

PD - 91415E IRHM9160 JANSR2N7425 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425 International Rectifier s RAD-Hard HEXFETTM techn

 8.3. Size:272K  international rectifier
 irhm9150 irhm9250 irhn9150 irhn9250.pdf pdf_icon

IRHM9130

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

MOSTRAR MÁS

Otros transistores... IRHM7264SE, IRHM7360, IRHM7360SE, IRHM7450, IRHM7450SE, IRHM7460SE, IRHM7Z60, IRHM9064, IRF1407, IRHM9150, IRHM9160, IRHM9230, IRHM9250, IRHM9260, IRHMB57064, IRHMB57260SE, IRHMB57Z60