IRHM9130 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHM9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO254AA
IRHM9130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHM9130 Datasheet (PDF)
irhm9130.pdf
PD - 90888CRADIATION HARDENED IRHM9130POWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol-TO-254AAogy provides high performance power MOSFETs forspace applications.
irhm9064 irhm9160 irhm9260.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426
irhm9160.pdf
PD - 91415EIRHM9160JANSR2N7425RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/660THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425International Rectifiers RAD-Hard HEXFETTM techn
irhm9150 irhm9250 irhn9150 irhn9250.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U
irhm9150.pdf
PD - 90889CIRHM9150JANSR2N7422RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/662THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080 -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080 -22A JANSF2N7422TO-254AAInternational Rectifiers RADHard HEXFETT
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NDH831N
History: NDH831N
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918