All MOSFET. IRHM9130 Datasheet

 

IRHM9130 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRHM9130

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO254AA

IRHM9130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHM9130 Datasheet (PDF)

1.1. irhm9130.pdf Size:128K _international_rectifier

IRHM9130
IRHM9130

PD - 90888C RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-254AA) RAD-Hard™ HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3Ω -11A IRHM93130 300K Rads (Si) 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technol- TO-254AA ogy provides high performance power MOSFETs for space applications.

4.1. irhm9150.pdf Size:144K _international_rectifier

IRHM9130
IRHM9130

PD - 90889C IRHM9150 JANSR2N7422 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/662 THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080? -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080? -22A JANSF2N7422 TO-254AA International Rectifiers RADHard HEXFETTM technol-

4.2. irhm9064 irhm9160 irhm9260.pdf Size:237K _international_rectifier

IRHM9130
IRHM9130

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

 4.3. irhm9150 irhm9250.pdf Size:272K _international_rectifier

IRHM9130
IRHM9130

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

4.4. irhm9160.pdf Size:122K _international_rectifier

IRHM9130
IRHM9130

PD - 91415E IRHM9160 JANSR2N7425 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073? -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073? -35A* JANSF2N7425 International Rectifiers RAD-Hard HEXFETTM technol- TO-254A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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