IRHM9260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHM9260
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHM9260

IRHM9260 Datasheet (PDF)

..1. Size:237K international rectifier
irhm9064 irhm9160 irhm9260.pdf

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

..2. Size:123K international rectifier
irhm9260.pdf

PD - 93858IRHM9260JANSR2N7426200V, P-CHANNEL RADIATION HARDENEDREF: MIL-PRF-19500/660 POWER MOSFET RAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-254AA)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9260 100K Rads (Si) 0.160 -27A JANSR2N7426 IRHM93260 300K Rads (Si) 0.160 -27A JANSF2N7426 TO-254AAInternational Rectifiers RAD-Hard

8.1. Size:94K international rectifier
irhm9230.pdf

Provisional Data Sheet No. PD-9.1395I T TI T T T I T Product Summary-200 Volt, 0.8 RAD HARD HEXFET, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiation doses asIRHM9230 -200V 0.8 -6.5Ahigh as 105 Rads (Si).

8.2. Size:117K international rectifier
irhm9250.pdf

PD - 91299CIRHM9250JANSR2N7423RADIATION HARDENED200V, P-CHANNELPOWER MOSFETREF: MIL-PRF-19500/662THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423International Rectifiers RAD-Hard HEXFET technol-

8.3. Size:272K international rectifier
irhm9150 irhm9250 irhn9150 irhn9250.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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