IRHMS67260 Todos los transistores

 

IRHMS67260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHMS67260
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: TO254AA
     - Selección de transistores por parámetros

 

IRHMS67260 Datasheet (PDF)

 ..1. Size:218K  international rectifier
 irhms67160 irhms67164 irhms67260 irhms67264.pdf pdf_icon

IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY

 9.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS67260

PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f

 9.2. Size:488K  international rectifier
 irhms597064 irhms597z60.pdf pdf_icon

IRHMS67260

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75

 9.3. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS4020AP | 2N7075

 

 
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