IRHMS67260 Todos los transistores

 

IRHMS67260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHMS67260

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.029 Ohm

Empaquetado / Estuche: TO254AA

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IRHMS67260 Datasheet (PDF)

1.1. irhms67160 irhms67164 irhms67260 irhms67264.pdf Size:218K _international_rectifier

IRHMS67260
IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY

5.1. irhms57064 irhms57160.pdf Size:270K _international_rectifier

IRHMS67260
IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

5.2. irhms597160.pdf Size:107K _international_rectifier

IRHMS67260
IRHMS67260

PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049? -45A* IRHMS593160 300K Rads (Si) 0.049? -45A* Low-Ohmic TO-254AA International Rectifiers R5TM technology provides Features: high performance power MOSFETs for space

 5.3. irhms597160 irhms597260.pdf Size:248K _international_rectifier

IRHMS67260
IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,

5.4. irhms597064 irhms597z60.pdf Size:488K _international_rectifier

IRHMS67260
IRHMS67260

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75

 5.5. irhms57z60.pdf Size:245K _international_rectifier

IRHMS67260
IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

5.6. irhms57163se irhms57260se irhms57264se.pdf Size:334K _international_rectifier

IRHMS67260
IRHMS67260

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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