All MOSFET. IRHMS67260 Datasheet

 

IRHMS67260 Datasheet and Replacement


   Type Designator: IRHMS67260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO254AA
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IRHMS67260 Datasheet (PDF)

 ..1. Size:218K  international rectifier
irhms67160 irhms67164 irhms67260 irhms67264.pdf pdf_icon

IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY

 9.1. Size:107K  international rectifier
irhms597160.pdf pdf_icon

IRHMS67260

PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f

 9.2. Size:488K  international rectifier
irhms597064 irhms597z60.pdf pdf_icon

IRHMS67260

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75

 9.3. Size:270K  international rectifier
irhms57064 irhms57160.pdf pdf_icon

IRHMS67260

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

Datasheet: IRHMS57264SE , IRHMS57Z60 , IRHMS597064 , IRHMS597160 , IRHMS597260 , IRHMS597Z60 , IRHMS67160 , IRHMS67164 , HY1906P , IRHMS67264 , IRH7054 , IRH7130 , IRH7150 , IRH7230 , IRH7250 , IRH7250SE , IRH7450 .

History: 2SJ473-01S | TPC8027

Keywords - IRHMS67260 MOSFET datasheet

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