IRFM064 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFM064 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFM064

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 3200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO254AA

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IRFM064 datasheet

..1. Size:271K international rectifier
irfm064.pdf pdf_icon

PD-90875C IRFM064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance.

9.1. Size:189K international rectifier
irfm044.pdf pdf_icon

PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET

9.2. Size:190K international rectifier
irfm054.pdf pdf_icon

PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET

9.3. Size:939K samsung
irfm014a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V 2 Lower RDS(ON) 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

Otros transistores... IRH7250, IRH7250SE, IRH7450, IRH7450SE, IRH9130, IRH9150, IRH9230, IRH9250, IRF740, IRFM120ATF, IRFM1310ST, IRFM210BTFFP001, IRFM220BTFFP001, IRFM250D, IRFM254, IRFM260, IRFM3205

IRFM064 Todos los transistores