IRFM064 MOSFET Datasheet: N-Ch, 60V, 35A. Full specification with pinout and replacement list

IRFM064 Specs and Replacement

   Type Designator: IRFM064
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO254AA

IRFM064 substitution

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IRFM064 datasheet

..1. Size:271K international rectifier
irfm064.pdf pdf_icon

PD-90875C IRFM064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance. ... See More ⇒

9.1. Size:189K international rectifier
irfm044.pdf pdf_icon

PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET ... See More ⇒

9.2. Size:190K international rectifier
irfm054.pdf pdf_icon

PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET... See More ⇒

9.3. Size:939K samsung
irfm014a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V 2 Lower RDS(ON) 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Detailed specifications: IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 , IRH9250 , IRF740 , IRFM120ATF , IRFM1310ST , IRFM210BTFFP001 , IRFM220BTFFP001 , IRFM250D , IRFM254 , IRFM260 , IRFM3205 .