All MOSFET. IRH7450 Datasheet

 

IRH7450 Datasheet and Replacement


   Type Designator: IRH7450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO3
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IRH7450 Datasheet (PDF)

 ..1. Size:297K  international rectifier
 irh7450.pdf pdf_icon

IRH7450

PD - 91807AREPETITIVE AVALANCHE AND dv/dt RATED IRH7450HEXFET TRANSISTOR IRH8450N CHANNELMEGA RAD HARD500Volt, 0.45 Product Summary, MEGA RAD HARD HEXFETInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRH7450 500V 0.45 11Astability and breakdown voltage stability at totalIR

 0.1. Size:118K  international rectifier
 irh7450se.pdf pdf_icon

IRH7450

PD - 91390BRADIATION HARDENED IRH7450SEPOWER MOSFET 500V, N-CHANNELRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (TO-204AA/AE)Product Summary Part Number Radiation Level RDS(on) IDIRH7450SE 100K Rads (Si) 0.51 12ATO-204AEInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGM170N10AL | UF630G-TM3-T | 2SJ420 | TPC8014 | WMB037N10HGS | TPC8115 | HGM046NE6A

Keywords - IRH7450 MOSFET datasheet

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