All MOSFET. IRH7450 Datasheet

 

IRH7450 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRH7450

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 190 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO3

IRH7450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRH7450 Datasheet (PDF)

1.1. irh7450se.pdf Size:118K _international_rectifier

IRH7450
IRH7450

PD - 91390B RADIATION HARDENED IRH7450SE POWER MOSFET 500V, N-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (TO-204AA/AE) Product Summary Part Number Radiation Level RDS(on) ID IRH7450SE 100K Rads (Si) 0.51Ω 12A TO-204AE International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs Features: for space applications. This technology

1.2. irh7450.pdf Size:297K _international_rectifier

IRH7450
IRH7450

PD - 91807A REPETITIVE AVALANCHE AND dv/dt RATED IRH7450 HEXFET® TRANSISTOR IRH8450 N CHANNEL MEGA RAD HARD Ω 500Volt, 0.45Ω Product Summary Ω, MEGA RAD HARD HEXFET Ω Ω International Rectifier’s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRH7450 500V 0.45Ω 11A stability and breakdown voltage stability at total IR

 

Datasheet: IRHMS67260 , IRHMS67264 , IRH7054 , IRH7130 , IRH7150 , IRH7230 , IRH7250 , IRH7250SE , IRFP4229 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 , IRH9250 , IRFM064 , IRFM120ATF , IRFM1310ST .

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