IRFM220BTFFP001 Datasheet and Replacement. Cross Reference Search

IRFM220BTFFP001 Datasheet (PDF)

4.1. Size:726K fairchild semi
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November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

7.1. Size:957K samsung
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Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

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Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Datasheet: IRH9130 , IRH9150 , IRH9230 , IRH9250 , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTFFP001 , IRF540N , IRFM250D , IRFM254 , IRFM260 , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRFMA450 .