IRFM220BTFFP001 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFM220BTFFP001
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de IRFM220BTFFP001 MOSFET
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IRFM220BTFFP001 datasheet
irfm220btf fp001.pdf
November 2001 IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast
irfm220a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.626 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
irfm224a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Low RDS(ON) 0.742 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
Otros transistores... IRH9130, IRH9150, IRH9230, IRH9250, IRFM064, IRFM120ATF, IRFM1310ST, IRFM210BTFFP001, IRF540, IRFM250D, IRFM254, IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540, IRFMA450
History: AP2608GY | 2SK2728 | 2SK2078
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