All MOSFET. IRF740 Datasheet

 

IRF740 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF740
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 125 W
   Maximum Drain-Source Voltage |Vds|: 400 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 63(max) nC
   Rise Time (tr): 27 nS
   Drain-Source Capacitance (Cd): 330 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
   Package: TO220AB

 IRF740 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF740 Datasheet (PDF)

 ..1. Size:926K  international rectifier
irf740.pdf

IRF740
IRF740

PD - 94872IRF740PbF Lead-Free12/5/03Document Number: 91053 www.vishay.com1IRF740PbFDocument Number: 91053 www.vishay.com2IRF740PbFDocument Number: 91053 www.vishay.com3IRF740PbFDocument Number: 91053 www.vishay.com4IRF740PbFDocument Number: 91053 www.vishay.com5IRF740PbFDocument Number: 91053 www.vishay.com6IRF740PbFTO-220AB Package Outline

 ..2. Size:482K  st
irf740 irf741 irf742 irf743-fi.pdf

IRF740
IRF740

 ..3. Size:93K  st
irf740.pdf

IRF740
IRF740

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740 400 V

 ..4. Size:154K  fairchild semi
irf740.pdf

IRF740
IRF740

 ..6. Size:196K  vishay
irf740 sihf740.pdf

IRF740
IRF740

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

 ..7. Size:196K  vishay
irf740pbf sihf740.pdf

IRF740
IRF740

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

 ..8. Size:990K  blue-rocket-elect
irf740.pdf

IRF740
IRF740

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

 ..9. Size:235K  inchange semiconductor
irf740.pdf

IRF740
IRF740

isc N-Channel MOSFET Transistor IRF740FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

 0.1. Size:135K  international rectifier
irf740as.pdf

IRF740
IRF740

PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch

 0.2. Size:1404K  international rectifier
irf740lcpbf.pdf

IRF740
IRF740

PD - 94880IRF740LCPbF Lead-Free12/10/03Document Number: 91052 www.vishay.com1IRF740LCPbFDocument Number: 91052 www.vishay.com2IRF740LCPbFDocument Number: 91052 www.vishay.com3IRF740LCPbFDocument Number: 91052 www.vishay.com4IRF740LCPbFDocument Number: 91052 www.vishay.com5IRF740LCPbFDocument Number: 91052 www.vishay.com6IRF740LCPbFDocument Nu

 0.3. Size:183K  international rectifier
irf7402pbf.pdf

IRF740
IRF740

PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (

 0.4. Size:242K  international rectifier
irf7404qpbf.pdf

IRF740
IRF740

PD - 96127AIRF7404QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS DVDSS = -20Vl P Channel MOSFET2 7S Dl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.040l Lead-FreeTop ViewDescriptionThese HEXFET Power MOSFET's in packageutilize the lastest processing techniqu

 0.5. Size:171K  international rectifier
irf740s.pdf

IRF740
IRF740

 0.6. Size:114K  international rectifier
irf7406.pdf

IRF740
IRF740

PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te

 0.7. Size:118K  international rectifier
irf7401.pdf

IRF740
IRF740

PD - 9.1244CIRF7401HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-Resistance S DVDSS = 20V2 7 N-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.022 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to

 0.8. Size:304K  international rectifier
irf740as-l.pdf

IRF740
IRF740

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2

 0.9. Size:116K  international rectifier
irf7403.pdf

IRF740
IRF740

PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingte

 0.10. Size:231K  international rectifier
irf7406pbf-1.pdf

IRF740
IRF740

IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

 0.11. Size:163K  international rectifier
irf7404.pdf

IRF740
IRF740

PD - 9.1246CIRF7404HEXFET Power MOSFET Generation V TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.040 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to a

 0.12. Size:234K  international rectifier
irf7404pbf-1.pdf

IRF740
IRF740

IRF7404TRPbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 0.04 2 7(@V = -4.5V) S DGSQg 50 nC 3 6S DID 4 5-6.7 A G D(@T = 25C)ATop View SO-8Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Frie

 0.13. Size:231K  international rectifier
irf7404pbf.pdf

IRF740
IRF740

PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 0.14. Size:951K  international rectifier
irf740spbf.pdf

IRF740
IRF740

PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli

 0.15. Size:197K  international rectifier
irf7401pbf.pdf

IRF740
IRF740

PD - 95724IRF7401PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAA1 8l N-Channel MosfetS DVDSS = 20Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proc

 0.16. Size:231K  international rectifier
irf7403pbf.pdf

IRF740
IRF740

PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc

 0.17. Size:262K  international rectifier
irf7406gpbf.pdf

IRF740
IRF740

PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

 0.18. Size:136K  international rectifier
irf7402.pdf

IRF740
IRF740

PD - 93851AIRF7402HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance 1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6S D Low Profile (

 0.19. Size:316K  international rectifier
irf740alpbf irf740aspbf.pdf

IRF740
IRF740

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2

 0.20. Size:174K  international rectifier
irf740lc.pdf

IRF740
IRF740

 0.21. Size:196K  international rectifier
irf740a.pdf

IRF740
IRF740

PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch

 0.22. Size:235K  international rectifier
irf7406pbf.pdf

IRF740
IRF740

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 0.23. Size:236K  international rectifier
irf7401pbf-1.pdf

IRF740
IRF740

IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri

 0.24. Size:93K  st
irf740s.pdf

IRF740
IRF740

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V

 0.25. Size:924K  fairchild semi
irf740b irfs740b.pdf

IRF740
IRF740

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

 0.26. Size:191K  samsung
irfp340-343 irf740-743.pdf

IRF740
IRF740

 0.27. Size:937K  samsung
irf740a.pdf

IRF740
IRF740

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.28. Size:206K  vishay
irf740apbf sihf740a.pdf

IRF740
IRF740

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

 0.29. Size:207K  vishay
irf740as sihf740as irf740al sihf740al.pdf

IRF740
IRF740

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

 0.30. Size:197K  vishay
irf740lc irf740lcpbf sihf740lc.pdf

IRF740
IRF740

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

 0.31. Size:195K  vishay
irf740spbf sihf740s.pdf

IRF740
IRF740

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

 0.32. Size:171K  vishay
irf740s sihf740s.pdf

IRF740
IRF740

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

 0.33. Size:205K  vishay
irf740a sihf740a.pdf

IRF740
IRF740

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

 0.34. Size:197K  vishay
irf740lc sihf740lc.pdf

IRF740
IRF740

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

 0.35. Size:283K  vishay
irf740b.pdf

IRF740
IRF740

IRF740Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 450- Low area specific on-resistanceRDS(on) max. () at 25 C VGS = 10 V 0.6- Low input capacitance (Ciss)AvailableQg max. (nC) 30- Reduced capacitive switching lossesQgs (nC) 4- High body diode ruggednessQgd (nC) 7- Avalanche energy rated (U

 0.36. Size:183K  infineon
irf7402pbf.pdf

IRF740
IRF740

PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (

 0.37. Size:231K  infineon
irf7404pbf.pdf

IRF740
IRF740

PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 0.38. Size:231K  infineon
irf7403pbf.pdf

IRF740
IRF740

PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc

 0.39. Size:235K  infineon
irf7406pbf.pdf

IRF740
IRF740

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 0.40. Size:236K  infineon
irf7401pbf-1.pdf

IRF740
IRF740

IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri

 0.41. Size:48K  hsmc
hirf740.pdf

IRF740
IRF740

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo

 0.42. Size:836K  cn vbsemi
irf7404tr.pdf

IRF740
IRF740

IRF7404TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

 0.43. Size:231K  inchange semiconductor
irf740fi.pdf

IRF740
IRF740

isc N-Channel MOSFET Transistor IRF740FIDESCRIPTIONDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltag

 0.44. Size:213K  inchange semiconductor
irf740a.pdf

IRF740
IRF740

isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

Datasheet: IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRFP260N , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI .

 

 
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