All MOSFET. IRF740 Datasheet

 

IRF740 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF740

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: TO220

IRF740 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF740 Datasheet (PDF)

1.1. irf7406gpbf.pdf Size:262K _upd-mosfet

IRF740
IRF740

PD -96259 IRF7406GPbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045Ω l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

1.2. irf740pbf.pdf Size:196K _upd-mosfet

IRF740
IRF740

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.55 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DES

 1.3. irf740lc irf740lcpbf.pdf Size:197K _upd-mosfet

IRF740
IRF740

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.55 • Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated • Comp

1.4. irf7404qpbf.pdf Size:242K _upd-mosfet

IRF740
IRF740

PD - 96127A IRF7404QPbF HEXFET® Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150°C Operating Temperature G D RDS(on) = 0.040Ω l Lead-Free Top View Description These HEXFET® Power MOSFET's in package utilize the lastest processing techniqu

 1.5. irf7401pbf-1.pdf Size:236K _upd-mosfet

IRF740
IRF740

IRF7401PbF-1 HEXFET® Power MOSFET VDS 20 V A A 1 8 S D RDS(on) max 0.022 Ω 2 7 (@V = 4.5V) S D GS Qg 48 nC 3 6 S D ID 4 5 8.7 A G D (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Fri

1.6. irf7406pbf-1.pdf Size:231K _upd-mosfet

IRF740
IRF740

IRF7406TRPbF-1 HEXFET® Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 Ω 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

1.7. irf7406pbf.pdf Size:235K _upd-mosfet

IRF740
IRF740

PD - 95302 IRF7406PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045Ω l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

1.8. irf740spbf.pdf Size:195K _upd-mosfet

IRF740
IRF740

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 • Surface Mount RDS(on) ()VGS = 10 V 0.55 • Available in Tape and Reel Qg (Max.) (nC) 63 • Dynamic dV/dt Rating Qgs (nC) 9.0 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 32 • Ease of Paralleling Configuration Sin

1.9. irf7404pbf-1.pdf Size:234K _upd-mosfet

IRF740
IRF740

IRF7404TRPbF-1 HEXFET® Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 Ω 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25°C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

1.10. irf740alpbf irf740aspbf.pdf Size:316K _upd-mosfet

IRF740
IRF740

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55Ω 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and 2

1.11. irf740b.pdf Size:924K _upd-mosfet

IRF740
IRF740

November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

1.12. irf7403pbf.pdf Size:231K _upd-mosfet

IRF740
IRF740

PD - 95301 IRF7403PbF HEXFET® Power MOSFET l Generation V Technology A l Ultra Low On-Resistance A 1 8 S D l N-Channel Mosfet VDSS = 30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022Ω l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

1.13. irf740apbf.pdf Size:206K _upd-mosfet

IRF740
IRF740

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ()VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

1.14. irf7404pbf.pdf Size:231K _upd-mosfet

IRF740
IRF740

PD - 95203 IRF7404PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040Ω l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

1.15. irf7402pbf.pdf Size:183K _upd-mosfet

IRF740
IRF740

PD - 95202 IRF7402PbF HEXFET® Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package Low Profile (<1.1mm) 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.035Ω Fast Switching Lead-Free Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier util

1.16. irf7401pbf.pdf Size:197K _upd-mosfet

IRF740
IRF740

PD - 95724 IRF7401PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D VDSS = 20V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022Ω l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

1.17. irf740s.pdf Size:93K _st

IRF740
IRF740

IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix

1.18. irf740.pdf Size:93K _st

IRF740
IRF740

IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 companys consolidated strip layout-based MESH 1 OVERLAY process. Thi

1.19. irf740-1-2-3-fi.pdf Size:482K _st2

IRF740
IRF740

1.20. irf740b.pdf Size:894K _fairchild_semi

IRF740
IRF740

November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast switchin

1.21. irf740.pdf Size:154K _fairchild_semi

IRF740
IRF740

1.22. irf740as-l.pdf Size:304K _international_rectifier

IRF740
IRF740

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.23. irf740a.pdf Size:196K _international_rectifier

IRF740
IRF740

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.24. irf740spbf.pdf Size:951K _international_rectifier

IRF740
IRF740

PD - 95204 IRF740SPbF Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline D

1.25. irf740s.pdf Size:171K _international_rectifier

IRF740
IRF740

1.26. irf740as.pdf Size:135K _international_rectifier

IRF740
IRF740

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Volt

1.27. irf7406.pdf Size:114K _international_rectifier

IRF740
IRF740

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

1.28. irf7404.pdf Size:163K _international_rectifier

IRF740
IRF740

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

1.29. irf7403.pdf Size:116K _international_rectifier

IRF740
IRF740

PD - 9.1245B PRELIMINARY IRF7403 HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

1.30. irf740lc.pdf Size:174K _international_rectifier

IRF740
IRF740

1.31. irf740.pdf Size:926K _international_rectifier

IRF740
IRF740

PD - 94872 IRF740PbF Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimen

1.32. irf7401.pdf Size:118K _international_rectifier

IRF740
IRF740

PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

1.33. irf7402.pdf Size:136K _international_rectifier

IRF740
IRF740

PD - 93851A IRF7402 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processi

1.34. irf740lcpbf.pdf Size:1404K _international_rectifier

IRF740
IRF740

PD - 94880 IRF740LCPbF Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number:

1.35. irf740a.pdf Size:937K _samsung

IRF740
IRF740

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.36. irfp340-343 irf740-743.pdf Size:191K _samsung

IRF740
IRF740



1.37. irf740lc sihf740lc.pdf Size:197K _vishay

IRF740
IRF740

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Compliant to RoHS Dire

1.38. irf740 sihf740.pdf Size:196K _vishay

IRF740
IRF740

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220

1.39. irf740a sihf740a.pdf Size:205K _vishay

IRF740
IRF740

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Singl

1.40. irf740.pdf Size:246K _inchange_semiconductor

IRF740
IRF740

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power suppli

1.41. hirf740.pdf Size:48K _hsmc

IRF740
IRF740

Spec. No. : MOS200512 HI-SINCERITY Issued Date : 2005.09.01 Revised Date : 2005.09.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N-Channel MOSFETs provide the designer with the best combination of f

Datasheet: IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF1404 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI .

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