IRH7450SE Datasheet. Specs and Replacement
Type Designator: IRH7450SE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 640 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
Package: TO3
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IRH7450SE datasheet
irh7450se.pdf
PD - 91390B RADIATION HARDENED IRH7450SE POWER MOSFET 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (TO-204AA/AE) Product Summary Part Number Radiation Level RDS(on) ID IRH7450SE 100K Rads (Si) 0.51 12A TO-204AE International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology ... See More ⇒
irh7450.pdf
PD - 91807A REPETITIVE AVALANCHE AND dv/dt RATED IRH7450 HEXFET TRANSISTOR IRH8450 N CHANNEL MEGA RAD HARD 500Volt, 0.45 Product Summary , MEGA RAD HARD HEXFET International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRH7450 500V 0.45 11A stability and breakdown voltage stability at total IR... See More ⇒
Detailed specifications: IRHMS67264, IRH7054, IRH7130, IRH7150, IRH7230, IRH7250, IRH7250SE, IRH7450, AON6426, IRH9130, IRH9150, IRH9230, IRH9250, IRFM064, IRFM120ATF, IRFM1310ST, IRFM210BTFFP001
Keywords - IRH7450SE MOSFET specs
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