All MOSFET. IRH9250 Datasheet


IRH9250 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRH9250

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 240 nS

Drain-Source Capacitance (Cd): 690 pF

Maximum Drain-Source On-State Resistance (Rds): 0.315 Ohm

Package: TO3

IRH9250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRH9250 Datasheet (PDF)

1.1. irh9250.pdf Size:174K _international_rectifier


PD-91392D RADIATION HARDENED IRH9250 POWER MOSFET 200V, P-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9250 100K Rads (Si) 0.315Ω -14A IRH93250 300K Rads (Si) 0.315Ω -14A International Rectifier’s RADHard HEXFET® TO-204AE technology provides high performance power MOSFETs for space applications. Thi

5.1. irh9230.pdf Size:53K _international_rectifier


Provisional Data Sheet No. PD-9.1391 IRH9230 AVALANCHE ENERGY AND dv/dt RATED HEXFET® TRANSISTOR P-CHANNEL RAD HARD Product Summary Ω -200 Volt, 0.8Ω RAD HARD HEXFET Ω, Ω Ω International Rectifier’s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation d

Datasheet: IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 , IRFZ44N , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTF_FP001 , IRFM220BTF_FP001 , IRFM250D , IRFM254 , IRFM260 .

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