All MOSFET. IRH9250 Datasheet

 

IRH9250 Datasheet and Replacement


   Type Designator: IRH9250
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 240 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
   Package: TO3
 

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IRH9250 Datasheet (PDF)

 ..1. Size:174K  international rectifier
 irh9250.pdf pdf_icon

IRH9250

PD-91392DRADIATION HARDENED IRH9250POWER MOSFET 200V, P-CHANNELRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (T0-204AE)Product SummaryPart Number Radiation Level RDS(on) ID IRH9250 100K Rads (Si) 0.315 -14A IRH93250 300K Rads (Si) 0.315 -14AInternational Rectifiers RADHard HEXFETTO-204AEtechnology provides high performance powerMOSFETs for space applications. Thi

 9.1. Size:53K  international rectifier
 irh9230.pdf pdf_icon

IRH9250

Provisional Data Sheet No. PD-9.1391IRH9230AVALANCHE ENERGY AND dv/dt RATEDHEXFET TRANSISTORP-CHANNELRAD HARDProduct Summary-200 Volt, 0.8 RAD HARD HEXFET, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiation d

Datasheet: IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 , IRF3205 , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTFFP001 , IRFM220BTFFP001 , IRFM250D , IRFM254 , IRFM260 .

History: RSD131P10 | 2SK888 | BUZ83 | SFF240J | 2SJ234S | 2SJ605-Z | WMN30N80M3

Keywords - IRH9250 MOSFET datasheet

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