All MOSFET. IRH9150 Datasheet

 

IRH9150 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRH9150

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 150 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO3

IRH9150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRH9150 Datasheet (PDF)

1.1. irh9150.pdf Size:179K _international_rectifier

IRH9150
IRH9150

PD-90879D RADIATION HARDENED IRH9150 POWER MOSFET 100V, P-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9150 100K Rads (Si) 0.075Ω -22A IRH93150 300K Rads (Si) 0.075Ω -22A TO-204AE International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. Thi

5.1. irh9130.pdf Size:119K _international_rectifier

IRH9150
IRH9150

PD - 90880C RADIATION HARDENED IRH9130 POWER MOSFET 100V, P-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204AA) Product Summary Part Number Radiation Level RDS(on) ID IRH9130 100K Rads (Si) 0.3Ω -11A IRH93130 300K Rads (Si) 0.3Ω -11A TO-204AA International Rectifier’s RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. Th

Datasheet: IRH7130 , IRH7150 , IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , APT50M38JFLL , IRH9230 , IRH9250 , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTF_FP001 , IRFM220BTF_FP001 , IRFM250D .

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