IRH9150 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRH9150
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 150 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: TO3
IRH9150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRH9150 Datasheet (PDF)
1.1. irh9150.pdf 
Size:179K _international_rectifier
PD-90879D RADIATION HARDENED IRH9150 POWER MOSFET 100V, P-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9150 100K Rads (Si) 0.075Ω -22A IRH93150 300K Rads (Si) 0.075Ω -22A TO-204AE International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. Thi
5.1. irh9130.pdf Size:119K _international_rectifier
PD - 90880C RADIATION HARDENED IRH9130 POWER MOSFET 100V, P-CHANNEL ® RAD Hard™ HEXFET TECHNOLOGY THRU-HOLE (T0-204AA) Product Summary Part Number Radiation Level RDS(on) ID IRH9130 100K Rads (Si) 0.3Ω -11A IRH93130 300K Rads (Si) 0.3Ω -11A TO-204AA International Rectifier’s RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. Th
Datasheet: IRH7130 , IRH7150 , IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE , IRH9130 , APT50M38JFLL , IRH9230 , IRH9250 , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTF_FP001 , IRFM220BTF_FP001 , IRFM250D .
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