All MOSFET. IRH9150 Datasheet

 

IRH9150 Datasheet and Replacement


   Type Designator: IRH9150
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO3
 

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IRH9150 Datasheet (PDF)

 ..1. Size:179K  international rectifier
 irh9150.pdf pdf_icon

IRH9150

PD-90879DRADIATION HARDENED IRH9150POWER MOSFET 100V, P-CHANNELRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (T0-204AE)Product SummaryPart Number Radiation Level RDS(on) ID IRH9150 100K Rads (Si) 0.075 -22A IRH93150 300K Rads (Si) 0.075 -22ATO-204AEInternational Rectifiers RADHard HEXFET technologyprovides high performance power MOSFETs for spaceapplications. Thi

 9.1. Size:119K  international rectifier
 irh9130.pdf pdf_icon

IRH9150

PD - 90880CRADIATION HARDENED IRH9130POWER MOSFET 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGYTHRU-HOLE (T0-204AA)Product SummaryPart Number Radiation Level RDS(on) ID IRH9130 100K Rads (Si) 0.3 -11A IRH93130 300K Rads (Si) 0.3 -11ATO-204AAInternational Rectifiers RADHard HEXFET technol-ogy provides high performance power MOSFETs forspace applications. Th

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE30D2519K

Keywords - IRH9150 MOSFET datasheet

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