IRH9230 Specs and Replacement

Type Designator: IRH9230

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO3

IRH9230 substitution

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IRH9230 datasheet

 ..1. Size:53K  international rectifier
 irh9230.pdf pdf_icon

IRH9230

Provisional Data Sheet No. PD-9.1391 IRH9230 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Product Summary -200 Volt, 0.8 RAD HARD HEXFET , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation d... See More ⇒

 9.1. Size:174K  international rectifier
 irh9250.pdf pdf_icon

IRH9230

PD-91392D RADIATION HARDENED IRH9250 POWER MOSFET 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9250 100K Rads (Si) 0.315 -14A IRH93250 300K Rads (Si) 0.315 -14A International Rectifier s RADHard HEXFET TO-204AE technology provides high performance power MOSFETs for space applications. Thi... See More ⇒

Detailed specifications: IRH7150, IRH7230, IRH7250, IRH7250SE, IRH7450, IRH7450SE, IRH9130, IRH9150, IRFZ44N, IRH9250, IRFM064, IRFM120ATF, IRFM1310ST, IRFM210BTFFP001, IRFM220BTFFP001, IRFM250D, IRFM254

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.