IRH9130 Specs and Replacement

Type Designator: IRH9130

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3

IRH9130 substitution

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IRH9130 datasheet

 ..1. Size:119K  international rectifier
 irh9130.pdf pdf_icon

IRH9130

PD - 90880C RADIATION HARDENED IRH9130 POWER MOSFET 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204AA) Product Summary Part Number Radiation Level RDS(on) ID IRH9130 100K Rads (Si) 0.3 -11A IRH93130 300K Rads (Si) 0.3 -11A TO-204AA International Rectifier s RADHard HEXFET technol- ogy provides high performance power MOSFETs for space applications. Th... See More ⇒

 9.1. Size:179K  international rectifier
 irh9150.pdf pdf_icon

IRH9130

PD-90879D RADIATION HARDENED IRH9150 POWER MOSFET 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9150 100K Rads (Si) 0.075 -22A IRH93150 300K Rads (Si) 0.075 -22A TO-204AE International Rectifier s RADHard HEXFET technology provides high performance power MOSFETs for space applications. Thi... See More ⇒

Detailed specifications: IRH7054, IRH7130, IRH7150, IRH7230, IRH7250, IRH7250SE, IRH7450, IRH7450SE, AO4468, IRH9150, IRH9230, IRH9250, IRFM064, IRFM120ATF, IRFM1310ST, IRFM210BTFFP001, IRFM220BTFFP001

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