IRFIZ14G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1001K international rectifier
irfiz14g irfiz14gpbf.pdf pdf_icon

IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur

..2. Size:159K international rectifier
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Document Number 90224 www.vishay.com 851 Document Number 90224 www.vishay.com 852 Document Number 90224 www.vishay.com 853 Document Number 90224 www.vishay.com 854 Document Number 90224 www.vishay.com 855 Document Number 90224 www.vishay.com 856 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o

..3. Size:1000K vishay
irfiz14g sihfiz14g.pdf pdf_icon

IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur

7.1. Size:273K 1
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7.2. Size:273K 1
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9.1. Size:197K 1
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9.2. Size:284K 1
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9.3. Size:291K 1
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9.4. Size:291K 1
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9.5. Size:210K 1
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IRFW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.050 (Typ.) 1 1 2 3 3 1. Gate 2. Drai

9.6. Size:2985K international rectifier
irfiz34g irfiz34gpbf.pdf pdf_icon

IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T

9.7. Size:1443K international rectifier
irfiz48g irfiz48gpbf.pdf pdf_icon

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura

9.8. Size:1301K international rectifier
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PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number 91188 www.vishay.com 1 IRFIZ34GPbF Document Number 91188 www.vishay.com 2 IRFIZ34GPbF Document Number 91188 www.vishay.com 3 IRFIZ34GPbF Document Number 91188 www.vishay.com 4 IRFIZ34GPbF Document Number 91188 www.vishay.com 5 IRFIZ34GPbF Document Number 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full

9.9. Size:93K international rectifier
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PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 39A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

9.10. Size:214K international rectifier
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PD-94834 IRFIZ48VPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Isolated Package VDSS = 60V l High Voltage Isolation = 2.5KVRMS l Fast Switching RDS(on) = 12m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 39A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced p

9.11. Size:224K international rectifier
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PD - 95595 IRFIZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 55V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest

9.12. Size:919K international rectifier
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PD - 94875 IRFIZ24GPbF Lead-Free 12/9/03 Document Number 91187 www.vishay.com 1 IRFIZ24GPbF Document Number 91187 www.vishay.com 2 IRFIZ24GPbF Document Number 91187 www.vishay.com 3 IRFIZ24GPbF Document Number 91187 www.vishay.com 4 IRFIZ24GPbF Document Number 91187 www.vishay.com 5 IRFIZ24GPbF Document Number 91187 www.vishay.com 6 IRFIZ24GPbF TO-220 Full-

9.13. Size:105K international rectifier
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PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per s

9.14. Size:169K international rectifier
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9.15. Size:213K international rectifier
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PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Lead-Free Description ID = 14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

9.16. Size:114K international rectifier
irfiz34e.pdf pdf_icon

PD - 9.1674A IRFIZ34E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.042 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

9.17. Size:114K international rectifier
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PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.071 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per

9.18. Size:217K international rectifier
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PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe

9.19. Size:105K international rectifier
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PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

9.20. Size:106K international rectifier
irfiz44n.pdf pdf_icon

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

9.21. Size:1392K international rectifier
irfiz44g irfiz44gpbf.pdf pdf_icon

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat

9.22. Size:214K international rectifier
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AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S

9.23. Size:105K international rectifier
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PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m G Fast Switching Fully Avalanche Rated ID = 20A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

9.24. Size:273K international rectifier
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9.25. Size:83K international rectifier
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PD - 94102 IRFIZ24V Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.060 Fully Avalanche Rated G Optimized for SMPS Applications Description ID = 14A S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

9.26. Size:170K international rectifier
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9.27. Size:225K international rectifier
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PD - 95594 IRFIZ24EPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 60V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.071 l Lead-Free G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely

9.28. Size:265K international rectifier
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PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

9.29. Size:265K international rectifier
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PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

9.30. Size:104K international rectifier
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PD - 9.1306A IRFIZ46N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance

9.31. Size:1555K international rectifier
irfiz24g irfiz24gpbf.pdf pdf_icon

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther

9.32. Size:109K international rectifier
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PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 Fully Avalanche Rated G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

9.33. Size:270K international rectifier
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PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 l Fully Avalanche Rated G l Lead-Free ID = 40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

9.34. Size:1442K vishay
irfiz48g sihfiz48g.pdf pdf_icon

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura

9.35. Size:1554K vishay
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IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther

9.36. Size:2984K vishay
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IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T

9.37. Size:1390K vishay
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IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat

9.38. Size:504K infineon
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IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

9.39. Size:502K infineon
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IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

9.40. Size:500K infineon
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IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

9.41. Size:2575K cn vbsemi
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IRFIZ24GP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

9.42. Size:2791K cn vbsemi
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IRFIZ24NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Singl

9.43. Size:275K inchange semiconductor
irfiz24g.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIZ24G FEATURES Low drain-source on-resistance RDS(ON) =0.1 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

9.44. Size:201K inchange semiconductor
irfiz24n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ24N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

9.45. Size:275K inchange semiconductor
irfiz48g.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIZ48G FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

9.46. Size:200K inchange semiconductor
irfiz34n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

9.47. Size:200K inchange semiconductor
irfiz44n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

9.48. Size:275K inchange semiconductor
irfiz34g.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

9.49. Size:274K inchange semiconductor
irfiz44g.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

9.50. Size:201K inchange semiconductor
irfiz48n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ48N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

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IRFIZ14G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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