IRFIZ14G PDF and Equivalents Search

 ..1. Size:1001K  international rectifier
 irfiz14g irfiz14gpbf.pdf

IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur... See More ⇒

 ..2. Size:159K  international rectifier
 irfiz14g.pdf

Document Number 90224 www.vishay.com 851 Document Number 90224 www.vishay.com 852 Document Number 90224 www.vishay.com 853 Document Number 90224 www.vishay.com 854 Document Number 90224 www.vishay.com 855 Document Number 90224 www.vishay.com 856 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o... See More ⇒

 ..3. Size:1000K  vishay
 irfiz14g sihfiz14g.pdf

IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur... See More ⇒

 7.1. Size:273K  1
 irfwz14a irfiz14a.pdf

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 7.2. Size:273K  1
 irfiz14a irfw14a.pdf

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 9.1. Size:197K  1
 irfiz44a irfw44a.pdf

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 9.2. Size:284K  1
 irfiz24a irfw24a.pdf

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 9.3. Size:291K  1
 irfiz34a irfw34a.pdf

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 9.4. Size:291K  1
 irfwz34a irfiz34a.pdf

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 9.5. Size:210K  1
 irfiz24a.pdf

IRFW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.050 (Typ.) 1 1 2 3 3 1. Gate 2. Drai... See More ⇒

 9.6. Size:2985K  international rectifier
 irfiz34g irfiz34gpbf.pdf

IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T... See More ⇒

 9.7. Size:1443K  international rectifier
 irfiz48g irfiz48gpbf.pdf

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura... See More ⇒

 9.8. Size:1301K  international rectifier
 irfiz34gpbf.pdf

PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number 91188 www.vishay.com 1 IRFIZ34GPbF Document Number 91188 www.vishay.com 2 IRFIZ34GPbF Document Number 91188 www.vishay.com 3 IRFIZ34GPbF Document Number 91188 www.vishay.com 4 IRFIZ34GPbF Document Number 91188 www.vishay.com 5 IRFIZ34GPbF Document Number 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full... See More ⇒

 9.9. Size:93K  international rectifier
 irfiz48v.pdf

PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 39A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ... See More ⇒

 9.10. Size:214K  international rectifier
 irfiz48vpbf.pdf

PD-94834 IRFIZ48VPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Isolated Package VDSS = 60V l High Voltage Isolation = 2.5KVRMS l Fast Switching RDS(on) = 12m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 39A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced p... See More ⇒

 9.11. Size:224K  international rectifier
 irfiz46npbf.pdf

PD - 95595 IRFIZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 55V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest... See More ⇒

 9.12. Size:919K  international rectifier
 irfiz24g.pdf

PD - 94875 IRFIZ24GPbF Lead-Free 12/9/03 Document Number 91187 www.vishay.com 1 IRFIZ24GPbF Document Number 91187 www.vishay.com 2 IRFIZ24GPbF Document Number 91187 www.vishay.com 3 IRFIZ24GPbF Document Number 91187 www.vishay.com 4 IRFIZ24GPbF Document Number 91187 www.vishay.com 5 IRFIZ24GPbF Document Number 91187 www.vishay.com 6 IRFIZ24GPbF TO-220 Full-... See More ⇒

 9.13. Size:105K  international rectifier
 irfiz24n.pdf

PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per s... See More ⇒

 9.14. Size:169K  international rectifier
 irfiz48g.pdf

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 9.15. Size:213K  international rectifier
 irfiz24npbf.pdf

PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Lead-Free Description ID = 14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒

 9.16. Size:114K  international rectifier
 irfiz34e.pdf

PD - 9.1674A IRFIZ34E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.042 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 9.17. Size:114K  international rectifier
 irfiz24e.pdf

PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.071 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 9.18. Size:217K  international rectifier
 auirfiz34n.pdf

PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe... See More ⇒

 9.19. Size:105K  international rectifier
 irfiz34n.pdf

PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s... See More ⇒

 9.20. Size:106K  international rectifier
 irfiz44n.pdf

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 9.21. Size:1392K  international rectifier
 irfiz44g irfiz44gpbf.pdf

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat... See More ⇒

 9.22. Size:214K  international rectifier
 auirfiz44n.pdf

AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S... See More ⇒

 9.23. Size:105K  international rectifier
 irfiz34v.pdf

PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m G Fast Switching Fully Avalanche Rated ID = 20A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac... See More ⇒

 9.24. Size:273K  international rectifier
 irfiz34g.pdf

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 9.25. Size:83K  international rectifier
 irfiz24v.pdf

PD - 94102 IRFIZ24V Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.060 Fully Avalanche Rated G Optimized for SMPS Applications Description ID = 14A S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ... See More ⇒

 9.26. Size:170K  international rectifier
 irfiz44g.pdf

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 9.27. Size:225K  international rectifier
 irfiz24epbf.pdf

PD - 95594 IRFIZ24EPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 60V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.071 l Lead-Free G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely ... See More ⇒

 9.28. Size:265K  international rectifier
 irfiz34npbf.pdf

PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒

 9.29. Size:265K  international rectifier
 irfiz44npbf.pdf

PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely ... See More ⇒

 9.30. Size:104K  international rectifier
 irfiz46n.pdf

PD - 9.1306A IRFIZ46N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020 G Description ID = 33A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance... See More ⇒

 9.31. Size:1555K  international rectifier
 irfiz24g irfiz24gpbf.pdf

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther... See More ⇒

 9.32. Size:109K  international rectifier
 irfiz48n.pdf

PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 Fully Avalanche Rated G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis... See More ⇒

 9.33. Size:270K  international rectifier
 irfiz48npbf.pdf

PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.016 l Fully Avalanche Rated G l Lead-Free ID = 40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒

 9.34. Size:1442K  vishay
 irfiz48g sihfiz48g.pdf

IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.018 f = 60 Hz) RoHS* Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Dynamic dV/dt Rating Configura... See More ⇒

 9.35. Size:1554K  vishay
 irfiz24g sihfiz24g.pdf

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther... See More ⇒

 9.36. Size:2984K  vishay
 irfiz34g sihfiz34g.pdf

IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T... See More ⇒

 9.37. Size:1390K  vishay
 irfiz44g sihfiz44g.pdf

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat... See More ⇒

 9.38. Size:504K  infineon
 irfiz34npbf.pdf

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ... See More ⇒

 9.39. Size:502K  infineon
 irfiz44npbf.pdf

IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

 9.40. Size:500K  infineon
 irfiz48npbf.pdf

IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

 9.41. Size:2575K  cn vbsemi
 irfiz24gp.pdf

IRFIZ24GP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single ... See More ⇒

 9.42. Size:2791K  cn vbsemi
 irfiz24npbf.pdf

IRFIZ24NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Singl... See More ⇒

 9.43. Size:275K  inchange semiconductor
 irfiz24g.pdf

iscN-Channel MOSFET Transistor IRFIZ24G FEATURES Low drain-source on-resistance RDS(ON) =0.1 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 9.44. Size:201K  inchange semiconductor
 irfiz24n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ24N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.45. Size:275K  inchange semiconductor
 irfiz48g.pdf

iscN-Channel MOSFET Transistor IRFIZ48G FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.46. Size:200K  inchange semiconductor
 irfiz34n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.47. Size:200K  inchange semiconductor
 irfiz44n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 9.48. Size:275K  inchange semiconductor
 irfiz34g.pdf

iscN-Channel MOSFET Transistor IRFIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.49. Size:274K  inchange semiconductor
 irfiz44g.pdf

iscN-Channel MOSFET Transistor IRFIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.50. Size:201K  inchange semiconductor
 irfiz48n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ48N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒