IRFIZ14G MOSFET. Datasheet pdf. Equivalent

IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur

Document Number: 90224 www.vishay.com851Document Number: 90224 www.vishay.com852Document Number: 90224 www.vishay.com853Document Number: 90224 www.vishay.com854Document Number: 90224 www.vishay.com855Document Number: 90224 www.vishay.com856Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

PD - 94861IRFIZ34GPbF Lead-Free12/03/03Document Number: 91188 www.vishay.com1IRFIZ34GPbFDocument Number: 91188 www.vishay.com2IRFIZ34GPbFDocument Number: 91188 www.vishay.com3IRFIZ34GPbFDocument Number: 91188 www.vishay.com4IRFIZ34GPbFDocument Number: 91188 www.vishay.com5IRFIZ34GPbFDocument Number: 91188 www.vishay.com6IRFIZ34GPbFTO-220 Full

PD-94072IRFIZ48VHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 39A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

PD-94834IRFIZ48VPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Isolated PackageVDSS = 60Vl High Voltage Isolation = 2.5KVRMS l Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 39Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced p

PD - 95595IRFIZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 55Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.020GDescriptionID = 33AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieve thelowest

PD - 94875IRFIZ24GPbF Lead-Free12/9/03Document Number: 91187 www.vishay.com1IRFIZ24GPbFDocument Number: 91187 www.vishay.com2IRFIZ24GPbFDocument Number: 91187 www.vishay.com3IRFIZ24GPbFDocument Number: 91187 www.vishay.com4IRFIZ24GPbFDocument Number: 91187 www.vishay.com5IRFIZ24GPbFDocument Number: 91187 www.vishay.com6IRFIZ24GPbFTO-220 Full-

PD - 9.1501AIRFIZ24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per s

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

PD - 9.1674AIRFIZ34EHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.042 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 9.1673AIRFIZ24EHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.071 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 97778AUTOMOTIVE GRADEAUIRFIZ34NFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance V(BR)DSS 55Vl Isolated PackageRDS(on) max. 40ml High Voltage Isolation = 2.5KVRMSl Sink to Lead Creepage Distantce = 4.8mmID 21Al 175C Operating Temperaturel Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionSpe

PD - 9.1489AIRFIZ34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per s

PD - 9.1403AIRFIZ44NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.024 Fully Avalanche RatedGID = 31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

IRFIZ44G, SiHFIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.028f = 60 Hz) RoHS*Qg (Max.) (nC) 95COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfigurat

AUTOMOTIVE GRADEPD - 97767AUIRFIZ44NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSS 55Vl Isolated Packagel High Voltage Isolation = 2.5KVRMSRDS(on) max. 24ml Sink to Lead Creepage Distantce = 4.8mml 175C Operating TemperatureID 31Al Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionS

PD - 94053IRFIZ34VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28mG Fast Switching Fully Avalanche RatedID = 20A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

PD - 94102IRFIZ24V Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.060 Fully Avalanche RatedG Optimized for SMPS ApplicationsDescription ID = 14ASAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

PD - 95594IRFIZ24EPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 60Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.071l Lead-FreeGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely

PD - 94840IRFIZ34NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04l Fully Avalanche RatedGl Lead-FreeID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

PD - 94836IRFIZ44NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.024l Fully Avalanche RatedGl Lead-FreeID = 31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

PD - 9.1306AIRFIZ46NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated RDS(on) = 0.020GDescriptionID = 33AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieve thelowest possible on-resistance

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

PD 9.1407IRFIZ48NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016 Fully Avalanche RatedGID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resis

PD -94835IRFIZ48NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016l Fully Avalanche RatedGl Lead-FreeID = 40ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

IRFIZ44G, SiHFIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.028f = 60 Hz) RoHS*Qg (Max.) (nC) 95COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfigurat

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

IRFIZ24GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

IRFIZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Singl

iscN-Channel MOSFET Transistor IRFIZ24GFEATURESLow drain-source on-resistance:RDS(ON) =0.1 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ24NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

iscN-Channel MOSFET Transistor IRFIZ48GFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ34NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ44NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

iscN-Channel MOSFET Transistor IRFIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

iscN-Channel MOSFET Transistor IRFIZ44GFEATURESLow drain-source on-resistance:RDS(ON) 28m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ48NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T