IRFIZ24G Todos los transistores

 ..1. Size:919K  international rectifier
 irfiz24g.pdf

PD - 94875 IRFIZ24GPbF Lead-Free 12/9/03 Document Number 91187 www.vishay.com 1 IRFIZ24GPbF Document Number 91187 www.vishay.com 2 IRFIZ24GPbF Document Number 91187 www.vishay.com 3 IRFIZ24GPbF Document Number 91187 www.vishay.com 4 IRFIZ24GPbF Document Number 91187 www.vishay.com 5 IRFIZ24GPbF Document Number 91187 www.vishay.com 6 IRFIZ24GPbF TO-220 Full-

 ..2. Size:1555K  international rectifier
 irfiz24g irfiz24gpbf.pdf

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther

 ..3. Size:1554K  vishay
 irfiz24g sihfiz24g.pdf

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther

 ..4. Size:275K  inchange semiconductor
 irfiz24g.pdf

iscN-Channel MOSFET Transistor IRFIZ24G FEATURES Low drain-source on-resistance RDS(ON) =0.1 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.1. Size:2575K  cn vbsemi
 irfiz24gp.pdf

IRFIZ24GP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

 7.1. Size:284K  1
 irfiz24a irfw24a.pdf

 7.2. Size:210K  1
 irfiz24a.pdf

IRFW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.050 (Typ.) 1 1 2 3 3 1. Gate 2. Drai

 7.3. Size:105K  international rectifier
 irfiz24n.pdf

PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per s

 7.4. Size:213K  international rectifier
 irfiz24npbf.pdf

PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07 Fully Avalanche Rated G Lead-Free Description ID = 14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

 7.5. Size:114K  international rectifier
 irfiz24e.pdf

PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.071 Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per

 7.6. Size:83K  international rectifier
 irfiz24v.pdf

PD - 94102 IRFIZ24V Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.060 Fully Avalanche Rated G Optimized for SMPS Applications Description ID = 14A S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 7.7. Size:225K  international rectifier
 irfiz24epbf.pdf

PD - 95594 IRFIZ24EPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 60V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.071 l Lead-Free G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely

 7.8. Size:2791K  cn vbsemi
 irfiz24npbf.pdf

IRFIZ24NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Singl

 7.9. Size:201K  inchange semiconductor
 irfiz24n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ24N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T