IRFIZ24G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFIZ24G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220F

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IRFIZ24G Datasheet (PDF)

..1. Size:919K international rectifier
irfiz24g.pdf

PD - 94875IRFIZ24GPbF Lead-Free12/9/03Document Number: 91187 www.vishay.com1IRFIZ24GPbFDocument Number: 91187 www.vishay.com2IRFIZ24GPbFDocument Number: 91187 www.vishay.com3IRFIZ24GPbFDocument Number: 91187 www.vishay.com4IRFIZ24GPbFDocument Number: 91187 www.vishay.com5IRFIZ24GPbFDocument Number: 91187 www.vishay.com6IRFIZ24GPbFTO-220 Full-

..2. Size:1555K international rectifier
irfiz24g irfiz24gpbf.pdf

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

..3. Size:1554K vishay
irfiz24g sihfiz24g.pdf

..4. Size:275K inchange semiconductor
irfiz24g.pdf

iscN-Channel MOSFET Transistor IRFIZ24GFEATURESLow drain-source on-resistance:RDS(ON) =0.1 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

0.1. Size:2575K cn vbsemi
irfiz24gp.pdf

IRFIZ24GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

7.1. Size:284K 1
irfiz24a irfw24a.pdf

7.2. Size:210K 1
irfiz24a.pdf

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

7.3. Size:105K international rectifier
irfiz24n.pdf

PD - 9.1501AIRFIZ24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per s

7.4. Size:213K international rectifier
irfiz24npbf.pdf

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

7.5. Size:114K international rectifier
irfiz24e.pdf

PD - 9.1673AIRFIZ24EHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.071 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per

7.6. Size:83K international rectifier
irfiz24v.pdf

PD - 94102IRFIZ24V Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.060 Fully Avalanche RatedG Optimized for SMPS ApplicationsDescription ID = 14ASAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

7.7. Size:225K international rectifier
irfiz24epbf.pdf

PD - 95594IRFIZ24EPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 60Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.071l Lead-FreeGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely

7.8. Size:213K infineon
irfiz24npbf.pdf

7.9. Size:2791K cn vbsemi
irfiz24npbf.pdf

IRFIZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Singl

7.10. Size:201K inchange semiconductor
irfiz24n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ24NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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