PD - 94875IRFIZ24GPbF Lead-Free12/9/03Document Number: 91187 www.vishay.com1IRFIZ24GPbFDocument Number: 91187 www.vishay.com2IRFIZ24GPbFDocument Number: 91187 www.vishay.com3IRFIZ24GPbFDocument Number: 91187 www.vishay.com4IRFIZ24GPbFDocument Number: 91187 www.vishay.com5IRFIZ24GPbFDocument Number: 91187 www.vishay.com6IRFIZ24GPbFTO-220 Full-

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

iscN-Channel MOSFET Transistor IRFIZ24GFEATURESLow drain-source on-resistance:RDS(ON) =0.1 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

IRFIZ24GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

PD - 9.1501AIRFIZ24NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per s

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

PD - 9.1673AIRFIZ24EHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.071 Fully Avalanche RatedGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 94102IRFIZ24V Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.060 Fully Avalanche RatedG Optimized for SMPS ApplicationsDescription ID = 14ASAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

PD - 95594IRFIZ24EPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 60Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.071l Lead-FreeGDescriptionID = 14AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieveextremely

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

IRFIZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Singl

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ24NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T