IRFIZ34NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFIZ34NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220F

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IRFIZ34NPBF datasheet

 ..1. Size:265K  international rectifier
 irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 ..2. Size:504K  infineon
 irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.1. Size:217K  international rectifier
 auirfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe

 6.2. Size:105K  international rectifier
 irfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

MOSTRAR MÁS

Otros transistores... IRFIZ14G, IRFIZ14GPBF, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24NPBF, IRFIZ34G, IRFIZ34GPBF, IRF530, IRFIZ44G, IRFIZ44GPBF, IRFIZ44NPBF, IRFIZ46NPBF, IRFIZ48G, IRFIZ48GPBF, IRFIZ48NPBF, IRFIZ48VPBF