IRFIZ34NPBF Todos los transistores

 

IRFIZ34NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFIZ34NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO220F
 

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IRFIZ34NPBF Datasheet (PDF)

 ..1. Size:265K  international rectifier
 irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

PD - 94840IRFIZ34NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04l Fully Avalanche RatedGl Lead-FreeID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 ..2. Size:504K  infineon
 irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.1. Size:217K  international rectifier
 auirfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 97778AUTOMOTIVE GRADEAUIRFIZ34NFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance V(BR)DSS 55Vl Isolated PackageRDS(on) max. 40ml High Voltage Isolation = 2.5KVRMSl Sink to Lead Creepage Distantce = 4.8mmID 21Al 175C Operating Temperaturel Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionSpe

 6.2. Size:105K  international rectifier
 irfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 9.1489AIRFIZ34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per s

MOSTRAR MÁS

Otros transistores... IRFIZ14G , IRFIZ14GPBF , IRFIZ24EPBF , IRFIZ24G , IRFIZ24GPBF , IRFIZ24NPBF , IRFIZ34G , IRFIZ34GPBF , AO4407 , IRFIZ44G , IRFIZ44GPBF , IRFIZ44NPBF , IRFIZ46NPBF , IRFIZ48G , IRFIZ48GPBF , IRFIZ48NPBF , IRFIZ48VPBF .

History: SFG10R05KF | CJA03N10-HF

 

 
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