IRFIZ34NPBF Specs and Replacement

Type Designator: IRFIZ34NPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO220F

IRFIZ34NPBF substitution

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IRFIZ34NPBF datasheet

 ..1. Size:265K  international rectifier
irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒

 ..2. Size:504K  infineon
irfiz34npbf.pdf pdf_icon

IRFIZ34NPBF

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ... See More ⇒

 6.1. Size:217K  international rectifier
auirfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe... See More ⇒

 6.2. Size:105K  international rectifier
irfiz34n.pdf pdf_icon

IRFIZ34NPBF

PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s... See More ⇒

Detailed specifications: IRFIZ14G, IRFIZ14GPBF, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24NPBF, IRFIZ34G, IRFIZ34GPBF, IRF530, IRFIZ44G, IRFIZ44GPBF, IRFIZ44NPBF, IRFIZ46NPBF, IRFIZ48G, IRFIZ48GPBF, IRFIZ48NPBF, IRFIZ48VPBF

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