IRFIZ34NPBF Datasheet and Replacement

PD - 94840IRFIZ34NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04l Fully Avalanche RatedGl Lead-FreeID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD - 97778AUTOMOTIVE GRADEAUIRFIZ34NFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance V(BR)DSS 55Vl Isolated PackageRDS(on) max. 40ml High Voltage Isolation = 2.5KVRMSl Sink to Lead Creepage Distantce = 4.8mmID 21Al 175C Operating Temperaturel Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionSpe

PD - 9.1489AIRFIZ34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per s

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ34NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T