IRFIZ48NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFIZ48NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220F

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IRFIZ48NPBF Datasheet (PDF)

..1. Size:270K international rectifier
irfiz48npbf.pdf

PD -94835IRFIZ48NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016l Fully Avalanche RatedGl Lead-FreeID = 40ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

..2. Size:500K infineon
irfiz48npbf.pdf

IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

6.1. Size:109K international rectifier
irfiz48n.pdf

PD 9.1407IRFIZ48NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016 Fully Avalanche RatedGID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resis

6.2. Size:201K inchange semiconductor
irfiz48n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ48NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

7.1. Size:1443K international rectifier
irfiz48g irfiz48gpbf.pdf

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

7.2. Size:93K international rectifier
irfiz48v.pdf

PD-94072IRFIZ48VHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 39A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

7.3. Size:214K international rectifier
irfiz48vpbf.pdf

PD-94834IRFIZ48VPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Isolated PackageVDSS = 60Vl High Voltage Isolation = 2.5KVRMS l Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 39Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced p

7.4. Size:169K international rectifier
irfiz48g.pdf

7.5. Size:1442K vishay
irfiz48g sihfiz48g.pdf

7.6. Size:275K inchange semiconductor
irfiz48g.pdf

iscN-Channel MOSFET Transistor IRFIZ48GFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

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