IRFIZ48NPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFIZ48NPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 89
nC
trⓘ - Rise Time: 78
nS
Cossⓘ -
Output Capacitance: 620
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO220F
IRFIZ48NPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIZ48NPBF
Datasheet (PDF)
..1. Size:270K international rectifier
irfiz48npbf.pdf 
PD -94835IRFIZ48NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016l Fully Avalanche RatedGl Lead-FreeID = 40ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
..2. Size:500K infineon
irfiz48npbf.pdf
IRFIZ48NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.016 Fully Avalanche Rated Lead-Free ID 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
6.1. Size:109K international rectifier
irfiz48n.pdf
PD 9.1407IRFIZ48NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.016 Fully Avalanche RatedGID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resis
6.2. Size:201K inchange semiconductor
irfiz48n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ48NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
7.1. Size:1443K international rectifier
irfiz48g irfiz48gpbf.pdf
IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura
7.2. Size:93K international rectifier
irfiz48v.pdf
PD-94072IRFIZ48VHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 39A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to
7.3. Size:214K international rectifier
irfiz48vpbf.pdf
PD-94834IRFIZ48VPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Isolated PackageVDSS = 60Vl High Voltage Isolation = 2.5KVRMS l Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 39Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced p
7.5. Size:1442K vishay
irfiz48g sihfiz48g.pdf
IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura
7.6. Size:275K inchange semiconductor
irfiz48g.pdf
iscN-Channel MOSFET Transistor IRFIZ48GFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
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