IRFR024PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR024PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 42 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia drenaje-fuente RDS(on): 0.1 Ohm
Empaquetado / Estuche: TO252
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IRFR024PBF Datasheet (PDF)
1.1. irfr024pbf.pdf 
Size:1050K _upd
IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Surface Mount (IRFR024, SiHFR024) RDS(on) ()VGS = 10 V 0.10 • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11 • Simple Driv
1.2. irfr024pbf irfu024pbf.pdf Size:1456K _international_rectifier
PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number: 91264 www.vishay.com 1 IRFR/U024PbF Document Number: 91264 www.vishay.com 2 IRFR/U024PbF Document Number: 91264 www.vishay.com 3 IRFR/U024PbF Document Number: 91264 www.vishay.com 4 IRFR/U024PbF Document Number: 91264 www.vishay.com 5 IRFR/U024PbF Document Number: 91264 www.vis
3.1. irfr024npbf.pdf Size:400K _upd
PD - 95066A IRFR024NPbF IRFU024NPbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform
3.2. irfr024n.pdf Size:178K _international_rectifier
PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on
3.3. irfr024.pdf Size:172K _international_rectifier
3.4. irfr024a.pdf Size:495K _samsung
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V
3.5. irfr024 irfu024 sihfr024 sihfu024.pdf Size:1159K _vishay
IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Parall
3.6. irfr024n.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
