IRFR024PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR024PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 42 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia drenaje-fuente RDS(on): 0.1 Ohm
Empaquetado / Estuche: TO252
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IRFR024PBF Datasheet (PDF)
1.1. irfr024pbf.pdf 
Size:1050K _upd
IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Surface Mount (IRFR024, SiHFR024) RDS(on) ()VGS = 10 V 0.10 • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11 • Simple Driv
1.2. irfr024pbf irfu024pbf.pdf Size:1456K _international_rectifier
PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number: 91264 www.vishay.com 1 IRFR/U024PbF Document Number: 91264 www.vishay.com 2 IRFR/U024PbF Document Number: 91264 www.vishay.com 3 IRFR/U024PbF Document Number: 91264 www.vishay.com 4 IRFR/U024PbF Document Number: 91264 www.vishay.com 5 IRFR/U024PbF Document Number: 91264 www.vis
3.1. irfr024npbf.pdf Size:400K _upd
PD - 95066A IRFR024NPbF IRFU024NPbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform
3.2. irfr024.pdf Size:172K _international_rectifier
3.3. irfr024n.pdf Size:178K _international_rectifier
PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on
3.4. irfr024a.pdf Size:495K _samsung
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V
3.5. irfr024 irfu024 sihfr024 sihfu024.pdf Size:1159K _vishay
IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Parall
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