IRFR024PBF - описание и поиск аналогов

 ..1. Size:1456K  international rectifier
 irfr024pbf irfu024pbf.pdf 

PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number 91264 www.vishay.com 1 IRFR/U024PbF Document Number 91264 www.vishay.com 2 IRFR/U024PbF Document Number 91264 www.vishay.com 3 IRFR/U024PbF Document Number 91264 www.vishay.com 4 IRFR/U024PbF Document Number 91264 www.vishay.com 5 IRFR/U024PbF Document Number 91264 ww

 ..2. Size:1050K  vishay
 irfr024pbf irfu024 irfu024pbf sihfr024 sihfu024.pdf 

IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Surface Mount (IRFR024, SiHFR024) RDS(on) ( )VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and Reel Qg (Max.) (nC) 25 Fast Switching Qgs (nC) 5.8 Ease of Paralleling Qgd (nC) 11 Simple Driv

 7.1. Size:322K  1
 irfu020 irfu022 irfu024 irfu025 irfr020 irfr022 irfr024 irfr025.pdf 

 7.2. Size:285K  1
 irfu024a irfr024a.pdf 

 7.3. Size:178K  international rectifier
 irfr024n.pdf 

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

 7.4. Size:172K  international rectifier
 irfr024.pdf 

 7.5. Size:400K  international rectifier
 irfr024npbf irfu024npbf.pdf 

PD - 95066A IRFR024NPbF IRFU024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

 7.6. Size:495K  samsung
 irfr024a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

 7.7. Size:1159K  vishay
 irfr024 irfu024 sihfr024 sihfu024.pdf 

IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11

 7.8. Size:483K  infineon
 auirfr024n auirfu024n.pdf 

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

 7.9. Size:844K  cn vbsemi
 irfr024ntr.pdf 

IRFR024NTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mot

 7.10. Size:241K  inchange semiconductor
 irfr024n.pdf 

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

 7.11. Size:240K  inchange semiconductor
 irfr024npbf.pdf 

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R =75m (Max)@V =10V DS(on) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Minimum Lot-to-Lot variations for robust device perform