IRFR1010ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR1010ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 91 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: TO252
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IRFR1010ZPBF Datasheet (PDF)
irfr1010zpbf irfu1010zpbf.pdf

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
auirfr1010z.pdf

PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie
irfr1010z.pdf

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010ZFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga
irfr1018epbf irfu1018epbf.pdf

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna
Otros transistores... IRFB7746 , IRFB7787 , IRFB812PBF , IRFR010PBF , IRFR014PBF , IRFR020PBF , IRFR024NPBF , IRFR024PBF , MMIS60R580P , IRFR1018EPBF , IRFR110PBF , IRFR1205PBF , IRFR120ATM , IRFR120NPBF , IRFR120PBF , IRFR120ZPBF , IRFR12N25DPBF .
History: FQD5N20LTM | APT8024B2VFR | FDD5614P | FTP08N50
History: FQD5N20LTM | APT8024B2VFR | FDD5614P | FTP08N50



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