IRFR1010ZPBF Todos los transistores

 

IRFR1010ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR1010ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 91 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 95 nC

Tiempo de elevación (tr): 76 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.0075 Ohm

Empaquetado / Estuche: TO252

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IRFR1010ZPBF Datasheet (PDF)

1.1. irfr1010zpbf.pdf Size:328K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5mΩ G Lead-Free ID = 42A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

1.2. irfr1010z.pdf Size:241K _inchange_semiconductor

IRFR1010ZPBF
IRFR1010ZPBF

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga

 3.1. irfr1018epbf.pdf Size:368K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m : l High Speed Power Switching max. 8.4m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna

3.2. irfr1018e.pdf Size:242K _inchange_semiconductor

IRFR1010ZPBF
IRFR1010ZPBF

isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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