IRFR1010ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR1010ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 91 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 95 nC

Tiempo de elevación (tr): 76 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.0075 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET IRFR1010ZPBF

IRFR1010ZPBF Datasheet (PDF)

1.1. irfr1010zpbf.pdf Size:328K _upd

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5mΩ G Lead-Free ID = 42A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

3.1. irfr1018epbf.pdf Size:368K _upd

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m : l High Speed Power Switching max. 8.4m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna

5.1. irfr120zpbf.pdf Size:318K _upd

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 190mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

5.2. irfr130atm.pdf Size:259K _upd

IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

5.3. irfr120npbf.pdf Size:390K _upd

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

5.4. irfr12n25dpbf.pdf Size:225K _upd

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

5.5. irfr120atm.pdf Size:254K _upd

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

5.6. irfr13n15dpbf.pdf Size:222K _upd

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

5.7. irfr1205pbf.pdf Size:393K _upd

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

5.8. irfr110pbf.pdf Size:1479K _upd

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

5.9. irfr120pbf.pdf Size:2013K _upd

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Q

5.10. irfr13n20dpbf.pdf Size:684K _upd

PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF • Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T

5.11. irfr18n15dpbf.pdf Size:220K _upd-mosfet

PD - 95061A IRFR18N15DPbF IRFU18N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.125Ω 18A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche

5.12. irfr15n20dpbf.pdf Size:225K _upd-mosfet

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165Ω 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

5.13. irfr1n60apbf.pdf Size:231K _upd-mosfet

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

5.14. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK �A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating

5.15. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK � Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratin

5.16. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

PD - 95026A IRFR110PbF IRFU110PbF � Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U110PbF

5.17. irfr12n25d.pdf Size:104K _international_rectifier

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET� Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

5.18. irfr120.pdf Size:168K _international_rectifier

5.19. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

PD- 95523A IRFR120PbF IRFU120PbF � Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U120PbF

5.20. irfr1n60a.pdf Size:181K _international_rectifier

PD - 91846B SMPS MOSFET IRFR1N60A IRFU1N60A Applications HEXFET� Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage a

5.21. irfr120n.pdf Size:142K _international_rectifier

PD - 91365B IRFR/U120N HEXFET� Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21? Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b

5.22. irfr1n60apbf irfu1n60apbf.pdf Size:257K _international_rectifier

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET� Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

5.23. irfr1205.pdf Size:144K _international_rectifier

PD - 91318B IRFR/U1205 HEXFET� Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027? Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

5.24. irfr15n20d.pdf Size:230K _international_rectifier

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET� Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165? 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR15N

5.25. irfr110.pdf Size:172K _international_rectifier

5.26. irfr13n20d.pdf Size:181K _international_rectifier

PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET� Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235? 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRFU13N20

5.27. irfr18n15d.pdf Size:126K _international_rectifier

PD- 93815A IRFR18N15D SMPS MOSFET IRFU18N15D HEXFET� Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.125? 18A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR18N15D IRFU18N15

5.28. irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf Size:86K _international_rectifier

5.29. irfr13n15d.pdf Size:128K _international_rectifier

PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET� Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR13N

5.30. irfr110a.pdf Size:496K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

5.31. irfr111 irfu111.pdf Size:282K _samsung

5.32. irfr130a.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 ? 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

5.33. irfr120a.pdf Size:499K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

5.34. irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf Size:244K _vishay

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (?)VGS = 10 V 7.0 � Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 � Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Single � Full

5.35. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition � Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.54 � Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 � Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 � Available in Tape and Reel Qgd (nC) 3.8 � Fast Switching Configuration Single � Ease of Parall

5.36. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition � Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.27 � Repetitive Avalanche Rated Qg (Max.) (nC) 16 � Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 � Straight Lead (IRFU120, SiHFU120) � Available in Tape and Reel Qgd (nC) 7.7 � F

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