IRFR1010ZPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR1010ZPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 91 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO252

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IRFR1010ZPBF datasheet

 ..1. Size:328K  international rectifier
 irfr1010zpbf irfu1010zpbf.pdf pdf_icon

IRFR1010ZPBF

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5m G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 5.1. Size:242K  international rectifier
 auirfr1010z.pdf pdf_icon

IRFR1010ZPBF

PD - 97683 AUTOMOTIVE GRADE AUIRFR1010Z HEXFET Power MOSFET Features D VDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ. 5.8m 175 C Operating Temperature max. 7.5m G Fast Switching ID (Silicon Limited) 91A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) S 42A Lead-Free, RoHS Compliant Automotive Qualifie

 5.2. Size:241K  inchange semiconductor
 irfr1010z.pdf pdf_icon

IRFR1010ZPBF

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010Z FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga

 7.1. Size:368K  international rectifier
 irfr1018epbf irfu1018epbf.pdf pdf_icon

IRFR1010ZPBF

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching max. 8.4m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna

MOSTRAR MÁS

Otros transistores... IRFB7746, IRFB7787, IRFB812PBF, IRFR010PBF, IRFR014PBF, IRFR020PBF, IRFR024NPBF, IRFR024PBF, 7N60, IRFR1018EPBF, IRFR110PBF, IRFR1205PBF, IRFR120ATM, IRFR120NPBF, IRFR120PBF, IRFR120ZPBF, IRFR12N25DPBF