All MOSFET. IRFR1010ZPBF Datasheet

 

IRFR1010ZPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR1010ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 91 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 76 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO252

IRFR1010ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR1010ZPBF Datasheet (PDF)

1.1. irfr1010zpbf.pdf Size:328K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5mΩ G Lead-Free ID = 42A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

3.1. irfr1018epbf.pdf Size:368K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m : l High Speed Power Switching max. 8.4m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna

 5.1. irfr120zpbf.pdf Size:318K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 190mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

5.2. irfr130atm.pdf Size:259K _upd

IRFR1010ZPBF
IRFR1010ZPBF

IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 5.3. irfr120npbf.pdf Size:390K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

5.4. irfr12n25dpbf.pdf Size:225K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 5.5. irfr120atm.pdf Size:254K _upd

IRFR1010ZPBF
IRFR1010ZPBF

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

5.6. irfr13n15dpbf.pdf Size:222K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

5.7. irfr1205pbf.pdf Size:393K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

5.8. irfr110pbf.pdf Size:1479K _upd

IRFR1010ZPBF
IRFR1010ZPBF

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

5.9. irfr120pbf.pdf Size:2013K _upd

IRFR1010ZPBF
IRFR1010ZPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Q

5.10. irfr13n20dpbf.pdf Size:684K _upd

IRFR1010ZPBF
IRFR1010ZPBF

PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF • Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T

5.11. irfr18n15dpbf.pdf Size:220K _upd-mosfet

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95061A IRFR18N15DPbF IRFU18N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.125Ω 18A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche

5.12. irfr15n20dpbf.pdf Size:225K _upd-mosfet

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165Ω 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

5.13. irfr1n60apbf.pdf Size:231K _upd-mosfet

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

5.14. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFR1010ZPBF
IRFR1010ZPBF

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating

5.15. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR1010ZPBF
IRFR1010ZPBF

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratin

5.16. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95026A IRFR110PbF IRFU110PbF Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U110PbF

5.17. irfr12n25d.pdf Size:104K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

5.18. irfr120.pdf Size:168K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

5.19. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U120PbF

5.20. irfr1n60a.pdf Size:181K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 91846B SMPS MOSFET IRFR1N60A IRFU1N60A Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage a

5.21. irfr120n.pdf Size:142K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21? Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b

5.22. irfr1n60apbf irfu1n60apbf.pdf Size:257K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

5.23. irfr1205.pdf Size:144K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 91318B IRFR/U1205 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027? Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

5.24. irfr15n20d.pdf Size:230K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165? 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR15N

5.25. irfr110.pdf Size:172K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

5.26. irfr13n20d.pdf Size:181K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235? 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRFU13N20

5.27. irfr18n15d.pdf Size:126K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD- 93815A IRFR18N15D SMPS MOSFET IRFU18N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.125? 18A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR18N15D IRFU18N15

5.28. irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf Size:86K _international_rectifier

IRFR1010ZPBF



5.29. irfr13n15d.pdf Size:128K _international_rectifier

IRFR1010ZPBF
IRFR1010ZPBF

PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR13N

5.30. irfr110a.pdf Size:496K _samsung

IRFR1010ZPBF
IRFR1010ZPBF

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

5.31. irfr111 irfu111.pdf Size:282K _samsung

IRFR1010ZPBF
IRFR1010ZPBF



5.32. irfr130a.pdf Size:504K _samsung

IRFR1010ZPBF
IRFR1010ZPBF

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 ? 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

5.33. irfr120a.pdf Size:499K _samsung

IRFR1010ZPBF
IRFR1010ZPBF

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

5.34. irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf Size:244K _vishay

IRFR1010ZPBF
IRFR1010ZPBF

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (?)VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Single Full

5.35. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR1010ZPBF
IRFR1010ZPBF

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parall

5.36. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

IRFR1010ZPBF
IRFR1010ZPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Qgd (nC) 7.7 F

Datasheet: IRFB7746 , IRFB7787 , IRFB812PBF , IRFR010PBF , IRFR014PBF , IRFR020PBF , IRFR024NPBF , IRFR024PBF , BUK455-200A , IRFR1018EPBF , IRFR110PBF , IRFR1205PBF , IRFR120ATM , IRFR120NPBF , IRFR120PBF , IRFR120ZPBF , IRFR12N25DPBF .

Back to Top

 


IRFR1010ZPBF
  IRFR1010ZPBF
  IRFR1010ZPBF
 

social 

LIST

Last Update

MOSFET: MDF13N65B | JCS7N65FB | JCS7N65CB | JCS5N50FT | JCS5N50CT | JCS5N50RT | JCS5N50VT | SI9945BDY | SI9934BDY | SI9933CDY | SI9926CDY | SI9434BDY | SI9433BDY | SI9424DY | SI9424BDY |

 

 

Back to Top