IRFR120NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR120NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 92 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: TO252

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IRFR120NPBF datasheet

 ..1. Size:390K  international rectifier
 irfr120npbf irfu120npbf.pdf pdf_icon

IRFR120NPBF

PD - 95067A IRFR/U120NPbF Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

 6.1. Size:142K  international rectifier
 irfr120n.pdf pdf_icon

IRFR120NPBF

PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21 Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T

 6.2. Size:764K  cn vbsemi
 irfr120ntrpbf.pdf pdf_icon

IRFR120NPBF

IRFR120NTRPBF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RAT

 6.3. Size:241K  inchange semiconductor
 irfr120n.pdf pdf_icon

IRFR120NPBF

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N FEATURES Static drain-source on-resistance RDS(on) 210m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

MOSTRAR MÁS

Otros transistores... IRFR020PBF, IRFR024NPBF, IRFR024PBF, IRFR1010ZPBF, IRFR1018EPBF, IRFR110PBF, IRFR1205PBF, IRFR120ATM, IRF9640, IRFR120PBF, IRFR120ZPBF, IRFR12N25DPBF, IRFR130ATM, IRFR13N15DPBF, IRFR13N20DPBF, IRFP044NPBF, IRFP044PBF