Справочник MOSFET. IRFR120NPBF

 

IRFR120NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR120NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 92 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR120NPBF

 

 

IRFR120NPBF Datasheet (PDF)

 ..1. Size:390K  international rectifier
 irfr120npbf irfu120npbf.pdf

IRFR120NPBF IRFR120NPBF

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

 ..2. Size:390K  infineon
 irfr120npbf irfu120npbf.pdf

IRFR120NPBF IRFR120NPBF

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

 6.1. Size:142K  international rectifier
 irfr120n.pdf

IRFR120NPBF IRFR120NPBF

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T

 6.2. Size:764K  cn vbsemi
 irfr120ntrpbf.pdf

IRFR120NPBF IRFR120NPBF

IRFR120NTRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RAT

 6.3. Size:241K  inchange semiconductor
 irfr120n.pdf

IRFR120NPBF IRFR120NPBF

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top