IRFR12N25DPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR12N25DPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 144 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 25 nS
Cossⓘ - Capacitancia de salida: 130 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IRFR12N25DPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFR12N25DPBF datasheet
..1. Size:225K international rectifier
irfr12n25dpbf irfu12n25dpbf.pdf 
PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
4.1. Size:104K international rectifier
irfr12n25d.pdf
PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I
8.2. Size:144K international rectifier
irfr1205.pdf
PD - 91318B IRFR/U1205 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027 Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This
8.3. Size:254K international rectifier
irfr120atm.pdf
IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu
8.4. Size:394K international rectifier
irfr1205pbf irfu1205pbf.pdf
PD - 95600A IRFR/U1205PbF Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Tr
8.6. Size:309K international rectifier
auirfu120z auirfr120z.pdf
PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall
8.7. Size:390K international rectifier
irfr120npbf irfu120npbf.pdf
PD - 95067A IRFR/U120NPbF Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP
8.8. Size:318K international rectifier
irfr120zpbf irfu120zpbf.pdf
PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 190m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r
8.9. Size:142K international rectifier
irfr120n.pdf
PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21 Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T
8.10. Size:309K international rectifier
auirfr120ztrl.pdf
PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall
8.11. Size:1326K international rectifier
irfr120pbf irfu120pbf.pdf
PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number 91266 www.vishay.com 1 IRFR/U120PbF Document Number 91266 www.vishay.com 2 IRFR/U120PbF Document Number 91266 www.vishay.com 3 IRFR/U120PbF Document Number 91266 www.vishay.com 4 IRFR/U120PbF Document Number 91266 www.vishay.com 5 IRFR/U120PbF Document Number 91266 www.vishay.com 6 IRFR/U12
8.12. Size:256K fairchild semi
irfr120a irfu120a.pdf
IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu
8.13. Size:499K samsung
irfr120a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
8.14. Size:2013K vishay
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q
8.15. Size:1989K vishay
irfr120 irfu120 sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q
8.16. Size:1338K cn evvo
irfr1205.pdf
IRFR1205 Features l VDS (V) = 55V ID= 44A (VGS=10V) l 27m (VGS = 10V) l l RDS(ON) Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering technigues The straight lead version D is for through- hole mounting applications. Power dissipation le- vels up to 1.5 watts are possible in typical surface mount appli- cations. G l Ultra LowOn
8.17. Size:1362K cn vbsemi
irfr120tr.pdf
IRFR120TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS
8.18. Size:764K cn vbsemi
irfr120ntrpbf.pdf
IRFR120NTRPBF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RAT
8.19. Size:797K cn vbsemi
irfr1205tr.pdf
IRFR1205TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no
8.20. Size:1018K cn minos
irfr1205tr.pdf
60V N-Channel Power MOSFET DESCRIPTION The IRFR1205TR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON)
8.21. Size:241K inchange semiconductor
irfr1205.pdf
isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 FEATURES Static drain-source on-resistance RDS(on) 27m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
8.22. Size:241K inchange semiconductor
irfr120z.pdf
isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120Z FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat
8.23. Size:241K inchange semiconductor
irfr120n.pdf
isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N FEATURES Static drain-source on-resistance RDS(on) 210m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat
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