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IRFR12N25DPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFR12N25DPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 144 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 14 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 25 ns

Выходная емкость (Cd): 130 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm

Тип корпуса: TO252

Аналог (замена) для IRFR12N25DPBF

 

 

IRFR12N25DPBF Datasheet (PDF)

1.1. irfr12n25dpbf.pdf Size:225K _upd

IRFR12N25DPBF
IRFR12N25DPBF

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

1.2. irfr12n25d.pdf Size:104K _international_rectifier

IRFR12N25DPBF
IRFR12N25DPBF

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

 4.1. irfr120zpbf.pdf Size:318K _upd

IRFR12N25DPBF
IRFR12N25DPBF

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 190mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

4.2. irfr120npbf.pdf Size:390K _upd

IRFR12N25DPBF
IRFR12N25DPBF

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

 4.3. irfr120atm.pdf Size:254K _upd

IRFR12N25DPBF
IRFR12N25DPBF

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

4.4. irfr1205pbf.pdf Size:393K _upd

IRFR12N25DPBF
IRFR12N25DPBF

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

 4.5. irfr120pbf.pdf Size:2013K _upd

IRFR12N25DPBF
IRFR12N25DPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Q

4.6. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFR12N25DPBF
IRFR12N25DPBF

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating

4.7. irfr120.pdf Size:168K _international_rectifier

IRFR12N25DPBF
IRFR12N25DPBF

4.8. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

IRFR12N25DPBF
IRFR12N25DPBF

PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U120PbF

4.9. irfr120n.pdf Size:142K _international_rectifier

IRFR12N25DPBF
IRFR12N25DPBF

PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21? Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b

4.10. irfr1205.pdf Size:144K _international_rectifier

IRFR12N25DPBF
IRFR12N25DPBF

PD - 91318B IRFR/U1205 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027? Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

4.11. irfr120a.pdf Size:499K _samsung

IRFR12N25DPBF
IRFR12N25DPBF

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

4.12. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

IRFR12N25DPBF
IRFR12N25DPBF

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Qgd (nC) 7.7 F

Другие MOSFET... IRFR1010ZPBF , IRFR1018EPBF , IRFR110PBF , IRFR1205PBF , IRFR120ATM , IRFR120NPBF , IRFR120PBF , IRFR120ZPBF , FDS4435 , IRFR130ATM , IRFR13N15DPBF , IRFR13N20DPBF , IRFP044NPBF , IRFP044PBF , IRFP048NPBF , IRFP048PBF , IRFP048R .

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