IRFR130ATM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR130ATM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 41 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 14 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IRFR130ATM MOSFET
- Selecciónⓘ de transistores por parámetros
IRFR130ATM datasheet
..1. Size:259K international rectifier
irfr130atm.pdf 
IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V (Typ.) Lower RDS(ON) 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum
..2. Size:764K cn vbsemi
irfr130atm.pdf
IRFR130ATM www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING
6.2. Size:504K samsung
irfr130a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C
8.1. Size:128K international rectifier
irfr13n15d.pdf
PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I
8.2. Size:222K international rectifier
irfr13n15dpbf irfr13n15dpbf.pdf
PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
8.3. Size:222K international rectifier
irfu13n15dpbf irfr13n15dpbf.pdf
PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
8.4. Size:181K international rectifier
irfr13n20d.pdf
PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRF
8.5. Size:684K international rectifier
irfr13n20dpbf irfu13n20dpbf.pdf
PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T
8.6. Size:222K international rectifier
irfr13n15dpbf.pdf
PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
8.7. Size:2455K cn vbsemi
irfr13n20dtr.pdf
IRFR13N20DTR www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RA
8.8. Size:2559K cn vbsemi
irfr13n15dtr.pdf
IRFR13N15DTR www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATION
8.9. Size:242K inchange semiconductor
irfr13n15d.pdf
isc N-Channel MOSFET Transistor IRFR13N15D, IIRFR13N15D FEATURES Static drain-source on-resistance RDS(on) 180m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
8.10. Size:242K inchange semiconductor
irfr13n20d.pdf
isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D FEATURES Static drain-source on-resistance RDS(on) 235m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
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