All MOSFET. IRFR130ATM Datasheet

 

IRFR130ATM Datasheet and Replacement


   Type Designator: IRFR130ATM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO252
 

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IRFR130ATM Datasheet (PDF)

 ..1. Size:259K  international rectifier
 irfr130atm.pdf pdf_icon

IRFR130ATM

IRFR/U130AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V (Typ.) Lower RDS(ON) : 0.092 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 ..2. Size:764K  cn vbsemi
 irfr130atm.pdf pdf_icon

IRFR130ATM

IRFR130ATMwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

 6.1. Size:282K  1
 irfu130a irfr130a.pdf pdf_icon

IRFR130ATM

 6.2. Size:504K  samsung
 irfr130a.pdf pdf_icon

IRFR130ATM

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 2 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

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Keywords - IRFR130ATM MOSFET datasheet

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