IRFP048NPBF Todos los transistores

 ..1. Size:1519K  international rectifier
 irfp048npbf.pdf

PD- 95422 IRFP048NPbF Lead-Free www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NPbF www.irf.com 7 IRFP048NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE THIS IS AN IRFPE30 WITH ASS

 6.1. Size:117K  international rectifier
 irfp048n.pdf

PD - 9.1409A IRFP048N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.016 Fully Avalanche Rated G ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben

 6.2. Size:241K  inchange semiconductor
 irfp048n.pdf

isc N-Channel MOSFET Transistor IRFP048N IIRFP048N FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

 7.1. Size:174K  international rectifier
 irfp048.pdf

 7.2. Size:863K  international rectifier
 irfp048r.pdf

 7.3. Size:2284K  international rectifier
 irfp048rpbf.pdf

PD- 95502 IRFP048RPbF Lead-Free Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 70* ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 52 A IDM 290 Pulsed Drain Current PD @TC = 25 C Power Dissipation 190 W Linear Derating Factor 1.3 W/ C VGS Gate-to-Source Voltage V 20 Single Pulse Avalanche Energy EAS 200 mJ Pe

 7.4. Size:1574K  vishay
 irfp048 sihfp048.pdf

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Confi

 7.5. Size:944K  vishay
 irfp048pbf sihfp048.pdf

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Conf

 7.6. Size:400K  inchange semiconductor
 irfp048.pdf

iscN-Channel MOSFET Transistor IRFP048 FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 7.7. Size:400K  inchange semiconductor
 irfp048r.pdf

iscN-Channel MOSFET Transistor IRFP048R FEATURES Low drain-source on-resistance RDS(ON) 18m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE