IRFP048NPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP048NPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 64
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 89
nC
trⓘ - Rise Time: 78
nS
Cossⓘ -
Output Capacitance: 620
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO247AC
IRFP048NPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP048NPBF
Datasheet (PDF)
..1. Size:1519K international rectifier
irfp048npbf.pdf 
PD- 95422IRFP048NPbF Lead-Freewww.irf.com 106/16/04IRFP048NPbF2 www.irf.comIRFP048NPbFwww.irf.com 3IRFP048NPbF4 www.irf.comIRFP048NPbFwww.irf.com 5IRFP048NPbF6 www.irf.comIRFP048NPbFwww.irf.com 7IRFP048NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASS
..2. Size:1519K infineon
irfp048npbf.pdf
PD- 95422IRFP048NPbF Lead-Freewww.irf.com 106/16/04IRFP048NPbF2 www.irf.comIRFP048NPbFwww.irf.com 3IRFP048NPbF4 www.irf.comIRFP048NPbFwww.irf.com 5IRFP048NPbF6 www.irf.comIRFP048NPbFwww.irf.com 7IRFP048NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASS
6.1. Size:117K international rectifier
irfp048n.pdf
PD - 9.1409AIRFP048NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.016 Fully Avalanche RatedGID = 64ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisben
6.2. Size:241K inchange semiconductor
irfp048n.pdf
isc N-Channel MOSFET Transistor IRFP048NIIRFP048NFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
7.3. Size:2284K international rectifier
irfp048rpbf.pdf
PD- 95502IRFP048RPbF Lead-FreeAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V70*ID @ TC = 100C Continuous Drain Current, VGS @ 10V52 AIDM290Pulsed Drain Current PD @TC = 25CPower Dissipation 190 WLinear Derating Factor 1.3 W/CVGSGate-to-Source Voltage V20Single Pulse Avalanche Energy EAS200 mJPe
7.4. Size:1574K vishay
irfp048 sihfp048.pdf
IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConfi
7.5. Size:944K vishay
irfp048pbf sihfp048.pdf
IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConf
7.6. Size:400K inchange semiconductor
irfp048.pdf
iscN-Channel MOSFET Transistor IRFP048FEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
7.7. Size:400K inchange semiconductor
irfp048r.pdf
iscN-Channel MOSFET Transistor IRFP048RFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
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