IRFP054NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP054NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 130 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO247AC

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IRFP054NPBF Datasheet (PDF)

..1. Size:1494K international rectifier
irfp054npbf.pdf

PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

..2. Size:1494K infineon
irfp054npbf.pdf

6.1. Size:109K international rectifier
irfp054n.pdf

PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben

6.2. Size:241K inchange semiconductor
irfp054n.pdf

isc N-Channel MOSFET Transistor IRFP054NIIRFP054NFEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

7.1. Size:216K international rectifier
irfp054v.pdf

PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

7.2. Size:874K international rectifier
irfp054.pdf

PD - 95000IRFP054PbF Lead-Free02/11/04Document Number: 91200 www.vishay.com1IRFP054PbFDocument Number: 91200 www.vishay.com2IRFP054PbFDocument Number: 91200 www.vishay.com3IRFP054PbFDocument Number: 91200 www.vishay.com4IRFP054PbFDocument Number: 91200 www.vishay.com5IRFP054PbFDocument Number: 91200 www.vishay.com6IRFP054PbFTO-247AC Package O

7.3. Size:1562K vishay
irfp054pbf sihfp054.pdf

IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com

7.4. Size:212K inchange semiconductor
irfp054pbf.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP054PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingSimple drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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