Справочник MOSFET. IRFP054NPBF

 

IRFP054NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP054NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 81 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 880 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP054NPBF

 

 

IRFP054NPBF Datasheet (PDF)

 ..1. Size:1494K  international rectifier
irfp054npbf.pdf

IRFP054NPBF
IRFP054NPBF

PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 ..2. Size:1494K  infineon
irfp054npbf.pdf

IRFP054NPBF
IRFP054NPBF

PD- 95423IRFP054NPbF Lead-Freewww.irf.com 106/16/04IRFP054NPbF2 www.irf.comIRFP054NPbFwww.irf.com 3IRFP054NPbF4 www.irf.comIRFP054NPbFwww.irf.com 5IRFP054NPbF6 www.irf.comIRFP054NPbFwww.irf.com 7IRFP054NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 6.1. Size:109K  international rectifier
irfp054n.pdf

IRFP054NPBF
IRFP054NPBF

PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben

 6.2. Size:241K  inchange semiconductor
irfp054n.pdf

IRFP054NPBF
IRFP054NPBF

isc N-Channel MOSFET Transistor IRFP054NIIRFP054NFEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

 7.1. Size:216K  international rectifier
irfp054v.pdf

IRFP054NPBF
IRFP054NPBF

PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.2. Size:874K  international rectifier
irfp054.pdf

IRFP054NPBF
IRFP054NPBF

PD - 95000IRFP054PbF Lead-Free02/11/04Document Number: 91200 www.vishay.com1IRFP054PbFDocument Number: 91200 www.vishay.com2IRFP054PbFDocument Number: 91200 www.vishay.com3IRFP054PbFDocument Number: 91200 www.vishay.com4IRFP054PbFDocument Number: 91200 www.vishay.com5IRFP054PbFDocument Number: 91200 www.vishay.com6IRFP054PbFTO-247AC Package O

 7.3. Size:1562K  vishay
irfp054pbf sihfp054.pdf

IRFP054NPBF
IRFP054NPBF

IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com

 7.4. Size:212K  inchange semiconductor
irfp054pbf.pdf

IRFP054NPBF
IRFP054NPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP054PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingSimple drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top