IRFP064NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP064NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO247AC

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IRFP064NPBF Datasheet (PDF)

..1. Size:598K international rectifier
irfp064npbf.pdf

PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

..2. Size:598K infineon
irfp064npbf.pdf

6.1. Size:255K international rectifier
auirfp064n.pdf

PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifical

6.2. Size:107K international rectifier
irfp064n.pdf

PD - 9.1383AIRFP064NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 110A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance

6.3. Size:362K cn evvo
irfp064n.pdf

IRFP064N N-Channel MOSFET Advanced Process TechnologyTO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedDescriptionThe TO-247 package is preferred for commercial-industrialapplications where higher power levels preclude the use ofDTO-220 devices. The TO-247 is similar but superior to theVDSS = 55Ve

6.4. Size:364K inchange semiconductor
irfp064n.pdf

isc N-Channel MOSFET Transistor IRFP064NFEATURESStatic drain-source on-resistance:RDS(on)8m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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