IRFP064NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP064NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO247AC

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IRFP064NPBF datasheet

 ..1. Size:598K  international rectifier
irfp064npbf.pdf pdf_icon

IRFP064NPBF

PD - 95001 IRFP064NPbF Lead-Free www.irf.com 1 2/11/04 IRFP064NPbF 2 www.irf.com IRFP064NPbF www.irf.com 3 IRFP064NPbF 4 www.irf.com IRFP064NPbF www.irf.com 5 IRFP064NPbF 6 www.irf.com IRFP064NPbF www.irf.com 7 IRFP064NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1

 6.1. Size:255K  international rectifier
auirfp064n.pdf pdf_icon

IRFP064NPBF

PD - 96375 AUTOMOTIVE GRADE AUIRFP064N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.008 Fast Switching G Fully Avalanche Rated ID 110A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifical

 6.2. Size:107K  international rectifier
irfp064n.pdf pdf_icon

IRFP064NPBF

PD - 9.1383A IRFP064N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

 6.3. Size:362K  cn evvo
irfp064n.pdf pdf_icon

IRFP064NPBF

IRFP064N N-Channel MOSFET Advanced Process Technology TO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of D TO-220 devices. The TO-247 is similar but superior to the VDSS = 55V e

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